PROGRAM

SESSION J

Radiation Hardness Assurance

Chairs: Roberta Mancini & Marc Poizat

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J-1

Enhanced SEB/SELC Degradation of SiC MOSFETs During Fragmented-Beam Ion Irradiation

Authors: A. Moreno(1), J. Debnath(2), M. Rostewitz(3), A. Billa(2), H. Gingold(2), E. Zhang(2), D. Fleetwood(4), I. Chatterjee(5)
1. TESAT / Airbus DS, Germany,
2. University of Central Florida, USA,
3. TESAT, Germany,
4. Vanderbilt University, USA,
5. Airbus, Germany

Presenting author: Alberto Moreno

SiC MOSFETs tested at HEARTS@CERN exhibit stronger SELC degradation than devices tested at UCL/GANIL, primarily because the higher-LET tails of fragmented beams create defect clusters more efficiently than monoenergetic beams with similar average LET.

J-2

Stochastic Radiation Effects in GaN HEMT: Cross-Section Analysis and Vgs Derating Strategies

Authors: A. Zimmaro(1), R. Ferraro(1), M. Ali(2), S. Energico(1), F. Fienga(3), S. Fiore(1), G. Gnemmi(1), C. Ohmori(4), G. Scognamiglio(3), V. Zoppo(5), A. Masi(1), S. Danzeca(1)
1. CERN, Switzerland,
2. GIKI University, Pakistan,
3. University of Naples Federico II, Italy,
4. High Energy Accelerator Research Organization, Japan,
5. Enginium, Italy

Presenting author: Alessandro Zimmaro

This paper evaluates GaN HEMTs' susceptibility to Single Event Burnout at CERN. Testing reveals that mitigating SEB and defining safe operating areas requires aggressive drain voltage derating and an empirically optimized off-state gate bias ($V_{GS}$).

J-3

A critical review of proton testing for SEE risk assessment

Authors: S. Dubos(1), L. Gouyet(2), E. Le goulven(2), L. Coïc(2), J. Guillermin(2), R. Ecoffet(3), F. Bezerra(3)
1. Trad Tests & Radiations, France,
2. TRAD, France,
3. CNES, France

Presenting author: Samuel Dubos

This work investigates the limitations of proton testing for Single Event Effects, using PSI campaign results and literature data, to raise awareness on Radiation Hardness Assurance approaches in the New Space industry.

J-4

Design Strategies for Dynamic Single-Event Effect Testing of Algorithmic Computation

Authors: I. Hudson(1), H. Hunnicutt(1), D. Loveless(2)
1. IU CREATE, USA,
2. Indiana University, USA

Presenting author: Isaac Hudson

Design strategies for heavy-ion testing of algorithmic resilience to SEE in a microcontroller are compared. Variance in efficacy is demonstrated based on timing of telemetry, component selection within the microcontroller, and SEFI management techniques.

J-5

Environment-Dependent Contribution of Different Particles for Radiation Hardness Assurance

Authors: X. Zhao(1), S. Tolson(1), J. Kronenberg(1), B. Bhuva(1)
1. Vanderbilt University, USA

Presenting author: Xiaotong Zhao

Measured cross-sections combined with environmental spectra show that technology scaling redistributes single-event error rate (SER) contributions. Highest SER shift from neutron- and proton-driven regimes to alpha-particle and heavy-ion regimes, requiring environment-specific radiation hardness assurance strategies.

POSTERS

PJ-1

Print Setting Optimization of 3D-Printed CubeSat Structures for Radiation Resistance in High-Energy Space Environments

Authors: M. Dai(1)
1. The Overlake School, USA

Presenting author: Matthew Dai

Print parameter effects on radiation shielding are analyzed in context of additively manufactured PEEK and PEI CubeSat structures in MEO. Simulations exhibit diminished returns across increasing infill density and face layers, supporting mass optimization possibilities.

PJ-2

A simple node-based estimation of the equivalent LET of a laser pulse for correlation with heavy ion SEU threshold in SRAM devices

Authors: M. Sacristan barbero(1), V. Pouget(2), F. Saigné(3), R. Garcia(4)
1. Arquimea Connect S.L., Spain,
2. IES-CNRS, France,
3. Université de Montpellier, France,
4. CERN, Switzerland

Presenting author: Vincent Pouget

We present the correlation of laser and heavy ion SEU data obtained on different SRAM cell technologies ranging from 16 to 110nm and derive a simple relationship between the technology node and the radius of integration to be used in the calculation of the laser equivalent LET for estimating the SEU threshold of SRAM cells. Diffusion-based modelling is used to relate differences in the laser and ion cross-sections to laser spot size effects.

PJ-3

Use of Dry Ice to Extend the Post-Irradiation Test Time of nMOS Devices

Authors: S. Witczak(1), J. Salzman(2), D. Fleetwood(3)
1. Northrop Grumman, USA,
2. Teledyne Micropac, USA,
3. Vanderbilt University, USA

Presenting author: Steven Witczak

The use of dry ice to mitigate annealing and extend the storage time between irradiation and electrical test is assessed for several types of nMOS devices. Implications for hardness assurance testing are discussed.

PJ-4

Comparing Single Event Effect Laser-Equivalent LET Thresholds with Heavy-Ion LET Thresholds for Six Unique Analog Devices

Authors: L. Andrus(1), C. Saltonstall ii(1), C. Gauderon(1), K. Leeson(1), D. Leonhardt(1)
1. Sandia National Laboratories, USA

Presenting author: Liam Andrus

Single event effect laser-equivalent linear energy transfer thresholds are compared to heavy-ion thresholds for six unique microelectronic devices. Assuming proper laser parameters are used, we observe agreement between laser and heavy-ion thresholds for all devices.

PJ-5

Standardizing AI Reliability: Community Benchmarks for AI Radiation Testing

Authors: H. Quinn(1), P. Rech(2), M. Wirthlin(3), L. Entrena(4), A. Barnard(5), S. Esquer(6), S. Guertin(7), W. Robinson(8), G. Swift(9)
1. Air Force Research Laboratory, USA,
2. University of Trento, Italy,
3. Brigham Young University, USA,
4. Universidad Carlos III, Spain,
5. Stellenbosch University, South Africa,
6. Vanderbilt University, USA,
7. NASA JPL, USA,
8. GTRI, USA,
9. Swift Engineering & Radiation Services, USA

Presenting author: Heather Quinn

To ensure the resilience of AI systems in space and safety-critical applications, a standardized approach to radiation testing is crucial. We propose developing community benchmarks, including standard models, inputs, and metrics, to qualify AI reliability.

PJ-6

Revisiting Petersen’s Proton SEU Figure-of-Merit Using Exponential Cross-Section Curve Model

Authors: F. Ozaki(1), K. Takeuchi(1), A. Ikuta(2), D. Kobayashi(2)
1. Research and Development Directorate, Japan Aerospace Exploration Agency, Japan,
2. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Japan

Presenting author: Fumihiko Ozaki

Petersen showed a correlation to convert heavy-ion direct-ionization SEU rates to proton indirect-ionization SEU rates. This revisit reveals that the conversion factor depends only on proton flux, reflecting similarities in neutron- and proton-induced SEU mechanisms.