PROGRAM
POSTER SESSIONS
POSTER SESSIONS
QUICK
NAVIGATION
Session A
PA-1
Nonequilibrium Auger Generation Model for SEE Simulations in Wide-Bandgap Power Devices
Authors: A. Makihara(1), S. Kuboyama(1), M. Iwata(2), M. Takahashi(2), M. Midorikawa(2), T. Suzuki(2), N. Nemoto(2), H. Shindou(2), A. Michez(3), T. Labau(3), C. Marques(3), F. Wrobel(4), F. Saigné(4), J. Boch(4)
1. HIREC, Japan
2. JAXA, Japan
3. Delphea, France
4. Université de Montpellier, France
Presenting author: Satoshi Kuboyama
Nonequilibrium Auger generation model was successfully applied to describe the enhanced charge collection observed in SiC power devices. The applicability of the model was demonstrated for different types of diodes using the device simulator ECORCE.
PA-2
Particle hit scoring capabilities in the 5th generation of FLUKA.CERN for radiation effect simulations
Authors: D. Lucsanyi(1), G. Hugo(1), R. Garcia alia(1), F. Wrobel(2)
1. CERN, Switzerland
2. University of Montpellier, France
Presenting author: David Lucsanyi
Improved G4SEE simulation capabilities have been integrated into the fifth generation of FLUKA, and demonstrated by simulations of intermediate-energy neutrons, obtaining particle-by-particle distributions of range, energy deposition, LET and their evolution in silicon.
PA-3
Single-event effect simulation based on an improved ion track temporal characteristics model
Authors: W. Zhao(1)
1. Northwest Institute of Nuclear Technology, China
Presenting author: Wen Zhao
An improved ion track temporal characteristics model was developed and incorporated into single-event effects TCAD simulation. The impact of ion track temporal characteristics on SEE responses of devices operating at different switching speeds was analyzed.
PA-4
Improved Diffusion-Collection Model Including Carrier Recombination and Electric Field
Authors: J. Autran(1), D. Munteanu(2), S. Moindjie(2), M. Dentan(3)
1. Université de Rennes, France
2. CNRS, France, 3. CEA; CERN, France
Presenting author: Jean-Luc AUTRAN
A general framework for the diffusion-collection model is proposed to analytically determine time-dependent equations of the collected current and charge. The effects of carrier recombination and carrier drift under a constant electric field are included.
PA-5
Modeling the Impact of Spatially Non-Uniform Irradiation on PIN Diodes
Authors: C. Ardisson(1), P. Caron(1), C. Inguimbert(1)
1. ONERA, France
Presenting author: Cyril Ardisson
A drift-diffusion solver extended with displacement damage mechanisms is validated against p-i-n diode measurements. Simulations reproduce the forward voltage shift under neutron irradiation and demonstrate that partial volume irradiation missestimates local displacement damage dose.
PA-6
Deep Learning‑Based Prediction of Single‑Event Transient Effects in SiGe HBTs
Authors: J. Zhang(1), X. Qin(1), Y. Yan(1), W. Hajdas(2), X. Wang(3), L. Lv(1)
1. Xidian University, China
2. Paul Sherrer Institute, Switzerland
3. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China
Presenting author: Jinxin Zhang
This work proposes a deep learning based SET prediction method for SiGe HBTs. A dual-branch LSTM network prediction model is designed. The prediction accuracy of the model is validated using TCAD and heavy-ion experimental data.
PA-7
Interpretation of SEU Ion-Species and Angular Dependence Based on Radial Track Structure in a 28-nm FPGA
Authors: M. Tominaga(1), Y. Sunada(1), R. Kiuchi(1), Y. Hiroshima(1), H. Iwashita(1), H. Sato(2), T. Kamiyama(2), M. Furusaka(2), Y. Kiyanagi(2)
1. NTT, Inc., Japan
2. Graduate School of Engineering, Hokkaido University, Japan
Presenting author: Mayu Tominaga
SEU characteristics in a 28-nm SRAM-based FPGA were investigated under various ion species and angular conditions. The results demonstrate radial track structure and device geometry, rather than LET alone, govern upset multiplicity and angular dependence.
CLICK HERE TO GO BACK TO TOP
Session B
PB-1
Thermal Neutron Response of 65-nm Bulk SRAMs in Stacked Printed Circuit Board Configuration
Authors: M. Dentan(1), S. Moindjie(2), E. Atukpor(3), M. Cecchetto(4), J. Autran(5), D. Munteanu(2), R. Garcia(4), I. Slipukhin(4), G. Gasiot(6), P. Roche(6)
1. CEA; CERN, France
2. CNRS, France
3. Institut Laue-Langevin, France
4. CERN, Switzerland
5. Université de Rennes, France
6. STMicroelectronics, France
Presenting author: Martin Dentan
We performed SER characterization of 65-nm bulk SRAMs mounted in 6-stage stacked PCBs and subjected to thermal neutrons at ILL. We characterize and model the PCB neutron absorption to correctly extract the bit-flip cross section.
PB-2
Predictive Modeling of Single-Event Phase Displacement in LC-Tank Phase-Locked Loops Using an Extended Generalized Linear Framework
Authors: L. Nichols(1), J. Prinzie(2), D. Loveless(1)
1. Indiana University Bloomington, USA
2. KU Leuven, Belgium
Presenting author: Lucas Nichols
A generalized linear model for single-event transient propagation is extended to LC-tank PLLs by incorporating varactor and tank disturbance mechanisms. Model predictions are validated using 65-nm heavy-ion and pulsed-laser measurements, enabling identification of radiation-sensitive subcircuits.
PB-3
Single-Event Characterization of Phase Locked Loops
Authors: M. Strackx(1), D. Wouters(1), B. Van bockel(1), H. Marien(1), Y. Cao(1)
1. Magics Technologies, Belgium
Presenting author: Maarten Strackx
This work reviews single‑event-transient characterization of PLLs and proposes a direct TDC‑based method enabling picosecond‑resolution, wide‑range phase detection, and cycle‑slip monitoring. Heavy‑ion experiments show PLL perturbations from ~1° to beyond 360°, requiring large detector range.
PB-4
Multi-Cell Upsets in a 7-nm Commercial FinFET Technology
Authors: M. Gorbunov(1), M. Van de burgwal(2), L. Berti(2), T. Vervecken(3), D. Van nuffel(3), T. Schulte(3), J. Vanden berk(3), D. Geys(4)
1. Imec, Belgium
2. imec, Belgium
3. Magics Technologies NV, Belgium
4. MAGICS Instruments, Belgium
Presenting author: Maxim Gorbunov
We present the results of heavy ion and high-energy proton testing of several single- and dual-port SRAM blocks with different bitcell designs. We analyze the upset multiplicity distributions and error maps.
PB-5
Direct Comparison of Proton- and Neutron-induced Energy-dependent SEU Cross Sections in Bulk Planar SRAM-based FPGAs From 28 to 90 nm
Authors: R. Kiuchi(1), Y. Sunada(1), Y. Hiroshima(1), M. Tominaga(1), H. Iwashita(1), T. Ikeda(1), H. Sato(2), S. Takao(2), T. Matsuura(2), T. Kamiyama(2), M. Furusaka(2), Y. Kiyanagi(2)
1. NTT, Inc., Japan
2. Faculty of Engineering, Hokkaido university, Japan
Presenting author: Ryu Kiuchi
Proton-induced SEU cross sections in 28- to 90-nm bulk planar SRAM-based FPGAs were compared with neutron-induced cross sections. They agreed above 20 MeV, supporting interchangeable for evaluating SEU rates of sub-100-nm bulk planar SRAM devices.
PB-6
Timing characteristics of GaAs surface barrier detectors for heavy-ion detection
Authors: M. Pereira(1), A. Quivy(2), S. Alberton(2), N. Medina(3), E. Macchione(2), N. Added(2), V. Aguiar(2)
1. University of São Paulo, Brazil, 2. University of Sao Paulo, Brazil, 3. Instituto de Física da Universidade de São Paulo, Brazil
Presenting author: Vitor Aguiar
GaAs Schottky detectors were tested under heavy ion irradiation (¹H, ¹⁶O, ³⁵Cl, ⁶³Cu). Rise times down to 6.0 ns (~13 ns/mm) were achieved, outperforming silicon, demonstrating strong potential for fast timing applications in nuclear instrumentation.
PB-7
Improved LET and Flux Dosimetry for Heavy-Ion Beams Using a 40-nm COTS SRAM
Authors: M. Rezaei(1), B. Ferraz(2), F. Franco(3), R. Garcia(2), I. Slipukhin(2), J. Clemente(4)
1. Universidad Complutense de Madrid / Departamento de Arquitectura de Computadores y Automática / Facultad de Informática, Spain
2. CERN, Switzerlan
3. Universidad Complutense de Madrid, Spain
4. Universidad Complutense Madrid, Spain
Presenting author: Bruno Ferraz
This paper presents a comparison of the flux and LET dosimetry for heavy ions of several radiation facilities using two SRAMs. A new method for performing such a task is also be introduced.
PB-8
Radiation Effects on DDR4 DRAM Under Cryogenic Conditions: Temperature-Dependent Analysis of Proton- and Gamma-Ray-Induced Errors
Authors: I. Kanghyeon(1)
1. Gyeongsang National University, Korea, Republic of
Presenting author: Im Kanghyeon
DDR4 DRAMs were irradiated with protons and gamma rays at 77, 153, and 300 K. Results showed cryogenic error sensitivity and indicated that proton-induced hard errors were more directly associated with displacement damage than TID.
PB-9
Combined Effects of Deep N-well and Layout on Charge-Sharing-Induced SEU Susceptibility in Sub-20nm FinFET DICE DFFs
Authors: J. Hu(1), G. Yu(2), Y. Chi(2), M. Tao(3), Y. Gao(2), J. Yang(3), D. Luo(2), B. Liang(2), J. Chen(2)
1. National University of Defense Technology, China
2. National University of Denfense Technology, China
3. Hunan University, China
Presenting author: Jiayi Hu
This study focuses on the charge-sharing-induced single-event upset (SEU) characteristics of DICE D flip-flops (DFFs) in sub-20 nm FinFET technology, clarifying the combined effects between deep N-well (DNW) and layout hardening techniques(common-drain).
CLICK HERE TO GO BACK TO TOP
Session C
PC-1
Proton and Neutron Irradiation Effects on the Dark Count Rate in 110 nm CMOS SPADs
Authors: R. Luigi(1)
1. INFN, Italy
Presenting author: Rignanese Luigi
110 nm CMOS SPADs were irradiated with protons and neutrons up to 4 x 109 neq/cm2. Online DCR monitoring reveals linear increase (5–7 cps/µm2 per 4 x 109 neq/cm2). Following off-line DCR measurements show ~40% room-temperature annealing recovery
PC-2
Radiation-Induced Dark Current Simulation Framework
Authors: N. Bensoussan(1), S. Urbano-rodriguez(1), J. Krynski(1), V. Goiffon(1), P. Goux(2), A. Le roch(1), A. Antonsanti(1), F. Lemmel(2), V. Affatato(2)
1. ISAE-SUPAERO, France
2. ESA-ESTEC, Netherlands
Presenting author: Noah Bensoussan
We present a novel dark current simulation framework for irradiated image sensors. Implemented in ESA Pyxel, it combines preradiation variability with displacement damage and total ionizing dose effects, reproducing measured dark current distributions across technologies.
PC-3
Radiation-Induced Degradation and Masking Effects in Quantum Entropy Sources for Space Applications
Authors: J. Cueto(1), J. Oliveros fernández(2), M. Rudé(3), D. Tulli(3), E. Cordero(4)
1. TAS Spain, Spai
2. Thales Alenia Space in Spain, Spain
3. Quside, Spain
4. Alter Technology Spain, Spain
Presenting author: Juan Cueto
Quantum Key Distribution (QKD) networks enable secure data transfer using quantum physics. As satellite-based QKD expands, it is necessary to assess the robustness of quantum components when exposed to space radiation environments.
PC-4
Effects of 10-keV X-ray and 1.8-MeV Proton Irradiation on the Refractive Index and Absorption Coefficient of Silicon Dioxide
Authors: H. Dattilo(1), J. Vielmette(1), N. Karom(1), X. Onwu(1), A. Sternberg(1), J. Trippe(1), D. Black(2), J. Black(2), D. Fleetwood(1), R. Schrimpf(1), S. Weiss(1), J. Nogan(2), R. Reed(1))
1. Vanderbilt University, USA
2. Sandia National Laboratories, USA
Presenting author: Hannah Dattilo
Custom designed devices irradiated with 10-keV X-rays and 1.8-MeV protons showed no change in SiO2 refractive index up to 210Mrad(SiO2), demonstrating that even high levels of radiation-induced trapped charge do not change SiO2 optical properties.
CLICK HERE TO GO BACK TO TOP
Session D
PD-1
Impact of TID on SEU Hardened Flip-Flop Structures Caused by SET Pulse Broadening in a 65 nm FD-SOI Process
Authors: S. Mandai(1), R. Nakajima(2), S. Taniguchi(1), H. Nakamoto(1), A. Matsumoto(1), S. Sugitani(1), J. Furuta(3), K. Kobayashi(4)
1. Kyoto Institute of Technology, Japan
2. The University of Osaka, Japan
3. Okayama Prefectural University, Japan
4. Kyoto Institure of Technology, Japan
Presenting author: Shuhei Mandai
This study evaluates TID effects on soft error mitigation in flip-flops. While the tolerance of the guard-gate design degrades due to SET pulse broadening, the stacked structure maintains high SEU tolerance and robustness against TID.
PD-2
Total Ionizing Dose Effects on DC and RF Performances of 22 nm FDSOI nMOSFETs
Authors: M. Chen(1), Y. Huang(1), F. Liu(1), W. Lu(1)
1. Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics of the Chinese Academy of Sciences, China
Presenting author: Mengting Chen
Total ionizing dose effects on 22 nm FDSOI RVT and SLVT nMOSFETs are investigated. Residual fT degradation after removing Vth shift was governed by gm in both, especially at low overdrive and in shorter channels.
PD-3
Analysis of TID-Induced Error Mechanisms in 58-nm NOR Flash Memory
Authors: T. Matsunaga(1), K. Sugai(2), M. Yano(2), M. Hashimoto(1)
1. Kyoto University, Japan
2. Winbond Electronics Corporation Japan, Japan
Presenting author: Tadashi Matsunaga
This paper investigates TID-induced error mechanisms in 58-nm NOR flash memory under read-only and erase/program modes, revealing erase-failure behavior and power-of-two error periodicity. The periodicity is attributable to degradation of thick-gate-oxide multiplexers.
PD-4
Neutron-Induced Degradation Mechanisms in NiO/β-Ga2O3 Heterojunction Diodes
Authors: X. Li(1), Y. Liu(2), S. Zhong(3), G. Andreetta(4), C. Peng(3), T. Ma(3), S. Bonaldo(4), A. Paccagnella(4)
1. China Electronic Product Reliability and Environmental Testing Research Institute, Italy
2. School of Nuclear Science, Energy and Power Engineering, Shandong University, China
3. China Electronic Product Reliability and Environmental Testing Research Institute, China
4. University of Padova, Italy
Presenting author: Xing Li
14 MeV neutron irradiation degraded NiO/β-Ga2O3 heterojunction diodes through carrier removal and deep defects. At 1×1014 n/cm2, current density decreased 50.3%, Ron,sp increased 149%, and DLTS revealed a neutron-induced trap at EC−0.72 eV.
PD-5
Thick Oxide-Related Total-Ionizing Dose Effects in 7-nm FinFET technology
Authors: M. Gorbunov(1), A. Caglar(2), M. Van de burgwal(2), L. Berti(2)
1. Imec, Belgium,
2. imec, Belgium
Presenting author: Maxim Gorbunov
We study the Total Ionizing Dose (TID) Effects in Shallow Trench Isolation, which affect the performance of high-ohmic resistors, bipolar junction transistors and FinFETs. We discuss the experimental data for 7-nm FinFET technology.
PD-6
TID Radiation Effects on the Piezoresistive Coefficients of 0.18 μm CMOS Transistors
Authors: O. Bonfanti(1), N. Roisin(2), T. Klauner(1), D. Flandre(1)
1. UCLouvain (ICTEAM), Belgium,
2. Aerospacelab, Belgium
Presenting author: Ottilie Bonfanti
This work investigates total ionizing dose effects on piezoresistive coefficients in 0.18 µm n- and p-MOSFETs up to 1000 ppm and 86 krad(Si). Results show limited TID dependence, confirming robustness for strain-sensitive CMOS circuits design.
PD-7
Impact of Total Ionizing Dose (TID) on Proton-Induced Single Event Effect(SEE)s in a Commercial DDR5 SDRAM
Authors: D. Bae(1), J. Suh(1), M. Jo(2), H. Kim(1), S. Kim(3), K. Lee(1), K. Kim(1), K. Lee(1), Y. Kim(1)
1. QRT, Republic of Korea
2. QRT Inc., Republic of Korea
3. Sogang University, Republic of Korea
Presenting author: Dongwoo Bae
This work examines TID–SEE interaction in commercial DDR5. Gamma irradiation to 100 krad(Si) induced retention degradation, while subsequent proton testing revealed two radiation-induced events, showing no dependence on accumulated dose for this device under test.
PD-8
Impact of Ionizing Radiation and Displacement Damage on Mo-SiNx Granular Metals
Authors: M. Meyerson(1), L. Biedermann(1), M. Mcgarry(1), R. Jacobs-gedrim(1), C. Smyth(1), S. Gilbert(1), D. Hughart(1), M. Landi(1)
1. Sandia National Laboratories, USA
Presenting author: Melissa Meyerson
Mo-SiNx granular metal devices exhibited minimal changes in current, Poole-Frenkel activation energy, and conduction barrier at low electric field from 1 Mrad(SiO2) gamma radiation and a non-monotonic decrease in resistance in response to displacement damage.
PD-9
High-Dose Total Ionizing Dose Effects in Commercial 4H-SiC MOSFETs and Alternative Power Devices
Authors: V. Kotagama(1), S. Kibal(2), R. Oliver(2), V. Kilchytska(3), V. Shash(1), M. Antoniou(1), A. Renz(1), P. Gammon(1)
1. University of Warwick, United Kingdom
2. University of Cambridge, United Kingdom
3. UCLouvain, Belgium
Presenting author: Virendra Malin Kotagama
This study compares radiation-induced degradation in devices, showing MOS-based technologies suffer bias-dependent threshold voltage shifts from oxide charge trapping, while JFETs remain stable; trench SiC and Si IGBTs exhibit performance, with partial recovery after annealing.
PD-10
Characterization of TID-Induced Leakage Current in 28-nm p-MOSFETs
Authors: G. Andreetta(1), L. Gelmi(2), E. Vallicelli(3), M. De matteis(3), A. Lai(4), A. Paccagnella(1), S. Mattiazzo(1), S. Bonaldo(1)
1. University of Padova, Italy
2. University of Pavia, Italy
3. University of Milano Bicocca, Italy
4. National Institute for Nuclear Physics (INFN) Cagliari, Italy
Presenting author: Gabriele Andreetta
This work investigates the TID-induced leakage current increase in p-channel MOSFETs. Unlike n-channel devices, ionizing radiation primarily enhances leakage between the drain diffusion and the n-well, resulting in a drain-to-bulk current component.
PD-11
Total-Ionizing-Dose Characterization of a 17–41 GHz GaAs pHEMT Low-Noise Amplifier
Authors: W. Yang(1), X. Pan(1), W. Liu(1), P. Zhou(2), C. Wang(3), W. Liu(1)
1. Nanjing University of Aeronautics and Astronautics, China
2. State Key Laboratory of Millimeter Waves, Southeast University, China
3. Chenghua Wang and Weiqiang Liu are with the College of Integrated Circuits, China
Presenting author: Weifeng Yang
Board-level Co-60 γ-ray TID characterization of a 17–41 GHz GaAs pHEMT LNA, evaluated over 17–27 GHz to 1 Mrad(Si), shows minor current fluctuation and nearly unchanged S-parameters and noise figure, indicating weak TID sensitivity.
PD-12
Investigation of Double-Peak Single Event Transients in SiGe LNAs: The Role of Parasitic PDN Resonance
Authors: X. Pan(1), W. Yang(1), J. Zhang(2), W. Liu(1), H. Guo(3), C. Wang(1), W. Liu(1), Y. Zhao(4)
1. Nanjing University of Aeronautics and Astronautics, China
2. Xidian University, China
3. Northwest Institute of Nuclear Technology, China
4. Beijing Microelectronics Technology Institute, China
Presenting author: Weifeng Yang
This paper investigates SET responses in an X-band SiGe HBT LNA under pulsed-laser and heavy-ion irradiation, revealing parasitic PDN resonance as the mechanism responsible for the anomalous single-peak and double-peak spectra.
PD-13
Unexpected Gate Current Leakage in Thin-Gate-Oxide LDMOS After TID Irradiation: Characterization and Mechanism
Authors: L. Hu(1), L. Shu(1), Y. Li(2), T. Zhang(1), S. Yue(1), X. Cai(1), L. Duo-li(1), J. Gao(1), B. Li(1)
1. Institute of Microelectronics of the Chinese Academy of Sciences, China
2. Beijing University of Posts and Telecommunications, China
Presenting author: Li-Bin Hu
This work first reports an unexpected increase in gate leakage current under normal operating gate voltage for thin-gate-oxide LDMOS devices following 60Co γ-ray irradiation. The Mechanism is analyzed through TCAD and low-frequency noise.
PD-14
Investigating the Effect of Si-substrate Thickness on Reliability of FinFET-Based SRAM PUFs
Authors: J. Shao(1), R. Song(1), D. Liu(1), Y. Chi(1), B. Liang(1), J. Chen(1), C. Hu(1), B. Liu(1), J. Zeng(1), Y. Wang(1)
1. College of Computer Science and Technology, National University of Defense Technology, China
Presenting author: Ruiqiang Song
FinFET-based SRAM PUF test chips with different Si-substrate thicknesses were irradiated. Experimental results indicate that the gate oxide defects dominate TID-induced PUF reliability degradation, while the substrate defects dominate heavy ion-induced PUF reliability degradation.
PD-15
Investigation of Total Ionizing Dose Effects on an HPK 3.2 PiN Diode Using 10 keV X-Ray Irradiation
Authors: T. Silva(1), A. Vilas bôas(1), F. Palomo Pinto(2), M. Pavanello(1), R. Giacomini(1), N. Medina(3), G. Saito(3), M. Leite(3), M. Guazzelli(1)
1. FEI – Fundação Educacional Inaciana;Padre Sabóia de Medeiros; Brazil
2. Universidad de Sevilla, Spain
3. Instituto de Física da Universidade de São Paulo, Brazil
Presenting author: Thalia Silva
This work investigates TID effects from 10 keV X-rays on an HPK-3.2-PiN, used as an LGAD reference. Results up to 611 krad highlight the dominant role of interface-related degradation mechanisms impacting detector reliability in radiation environments.
CLICK HERE TO GO BACK TO TOP
Session E
PE-1
Radiation Effects on Vision Transformer Attention Modules in Edge AI Platforms
Authors: L. Frias(1), G. Leon(2), J. Belloch(1), J. Badia(2), A. Lindoso(1)
1. Universidad Carlos III de Madrid, Spain,
2. Universitat Jaume I, Spain
Presenting author: Lester Frias
This study evaluates proton radiation effects on Vision Transformer (ViT) attention modules using an NVIDIA Jetson Orin Nano, characterizing inference reliability by quantifying radiation-induced Silent Data Corruptions and Detected Unrecoverable Errors.
PE-2
ARM vs. RISC-V: A Direct Single-Event Effect Comparison on Shared Silicon
Authors: M. Esterhuyse(1), A. Barnard(1)
1. Stellenbosch University, South Africa
Presenting author: Michael Esterhuyse
This study compares Single-Event Effect (SEE) susceptibility between ARM and RISC-V architectures under heavy-ion irradiation. The RP2350 microcontroller provides shared silicon for both cores, eliminating manufacturing variables to enable direct comparison.
PE-3
A Fault-driven Methodology for Efficient Selective TMR in FINN-Based CNN Accelerators in FPGA RISC-V Systems
Authors: V. Veiga(1), F. Benevenuti(1), N. Medina(2), V. Aguiar(2), S. Alberton(3), A. Beck(1), J. Azambuja(1), F. Kastensmidt(1)
1. Universidade Federal do Rio Grande do Sul, Brazil,
2. Instituto de Física da Universidade de São Paulo, Brazil,
3. University of Sao Paulo, Institute of Physics, Brazil
Presenting author: Vicente Veiga
This work proposes a fault-driven methodology for selective TMR in FINN accelerators. Targeting output-proximal layers achieves 64% of total reliability gains with only 30% area overhead, optimizing fault tolerance for FPGA-based RISC-V AI systems.
PE-4
Mission-Aware Reliability Assessment of SEU Impact on FPGA DPU Accelerators
Authors: F. Buccellato(1), E. Vacca(1), C. Desio(1), S. Azimi(1), L. Sterpone(1)
1. Politecnico di Torino, Italy
Presenting author: Federico Buccellato
This work presents a mission-aware methodology for SEU reliability assessment of FPGA-based DPU accelerators, combining GEANT4 radiation modeling with runtime logits based anomaly detection to quantify inference integrity and support reliability decisions in CubeSats.
PE-5
Single Event Effects characterisation of AMD Versal Programmable Logic
Authors: D. Agiakatsikas(1), V. Vlagkoulis(1), G. Karaoglanian(1), S. Aitzan(1), P. Mihalis(1), S. Bounasser(2), C. Poivey(2)
1. University of Piraeus, Greece,
2. European Space Agency, ESTEC, Netherlands
Presenting author: Dimitris Agiakatsikas
Heavy-ion irradiation experiments are conducted on an AMD Versal device. Results quantify cross-sections of WSR and DSP programmable logic circuits, analyse failure modes, and attribute failures to configuration memory or flip-flop upsets.
PE-6
SET Analysis of FPGA-Based TSN Communication for Space Applications
Authors: M. Duni(1), G. Cora(1), C. De sio(1), S. Azimi(1), L. Sterpone(1)
1. Politecnico di Torino, Italy
Presenting author: Morgana Duni
This paper presents an investigation on the effects and propagation of Single-Event Transients (SET) in Rad-Hard FPGA-based Time-Sensitive Network (TSN) architectures for space-oriented applications.
PE-7
Methodology Development for SEE Laser Testing of a ResNet50 CNN Custom Hardware Accelerator using Versal AIEngines
Authors: S. Achaq(1), V. Pouget(2), L. Artola(3), A. Urena(3), J. Boch(4)
1. Sorbonne université, France,
2. IES-CNRS, France,
3. ONERA, France,
4. Univ Montpellier, France
Presenting author: Salma Achaq
We present the SEE laser testing methodology and associated results for a custom CNN hardware accelerator implemented in the AIEngines of the Versal SoC. Data events and application hangs are quantified. The optimized observability of the developed test-bench reveal details about data events propagation in the CNN layers, as well as artefacts to be considered also for particle beam testing.
PE-8
Comprehensive Analysis of Heavy-Ion Test Results on 112 Gbps High-Speed Serial Link IP
Authors: M. Glorieux(1), T. Lange(1), R. Gaillard(1), I. Nofal(1), D. Levacq(2), B. Said(3), R. Jain(4), M. Lerchenmueller(5)
1. IROC Technologies, France,
2. European Space Agency, ESTEC, Netherlands,
3. ESA, Netherlands,
4. Cadence Design Systems, Inc, USA,
5. Cadence Design Systems GmbH, Germany
Presenting author: Maximiien Glorieux
A 112Gbps High-Speed Serial-Link IP was tested under heavy ion irradiation, and different failure modes were identified and characterized in terms of cross-section and criticality at system level.
PE-9
Capabilities and Limitations of Pulsed Laser Testing for SEE Evaluation of a Deep Submicron Digital SoC
Authors: C. Elash(1), Z. Li(1), J. Xing(1), X. Lu(1), R. Basak(1), G. Belev(1), J. Wright(2), L. Chen(1)
1. University of Saskatchewan, Canada,
2. University of Wollongong, Australia
Presenting author: Christopher Elash
This work examines how pulsed laser testing reproduces single-event effects in a 22-nm radiation-hardened RISC-V SoC against heavy-ion data. SRAM trends agree qualitatively, while scan-order bias and logic-region response highlight limitations in system-level SEE evaluation.
CLICK HERE TO GO BACK TO TOP
Session F
PF-1
Distributed-Voter Triple Modular Redundancy Comparative Study
Authors: D. Gonzalez-montesoro(1), A. Serrano-cases(2), R. Bastos(3), S. Cuenca-asensi(1), E. Atukpor(4), A. Martinez-alvarez(1)
1. University of Alicante, Spain,
2. Alicante University, Spain,
3. Univ. Grenoble Alpes / TIMA laboratory, France,
4. Institut Laue-Langevin, France
Presenting author: Dario Gonzalez-Montesoro
This work evaluates reliability and performance of a Rust-based Distributed Voter for TMR, eliminating the single point of failure through safe multithreading; neutron irradiation shows no worsening fault sensitivity with reliability comparable to C implementations.
PF-2
A Radiation-Hardened Bandgap Reference Circuit for Active Pixel Sensors
Authors: P. Li(1), H. Zhu(1)
1. Zhejiang University, China, China
Presenting author: Pengxu Li
A radiation-hardened bandgap reference in a 180-nm CMOS process employing an adaptive feedback calibration loop is proposed. Irradiated up to 250 Mrad(SiO$_2$), the design maintains reference voltage variation within 2%, confirming the radiation tolerance.
PF-3
Evaluation of error mitigation techniques for RISC-V soft cores under proton irradiation
Authors: J. Cano(1), L. Entrena(2), M. Garcia-valderas(3), A. Lindoso(4)
1. Universidad Carlos III de Madrid, Spain,
2. Universidad Carlos III, Spain,
3. University Carlos III of Madrid, Spain,
4. University Carlos III Madrid, Spain
Presenting author: Jorge Cano
This work evaluates error mitigation for RISC-V soft cores on SRAM-based FPGAs using proton irradiation. It analyzes trade offs between error detection and hardware overhead, and compares vendor supported protections with custom mitigation techniques.
PF-4
Neutron Characterization of a Fault-Tolerant Pipelined RISC-V SoC and Instruction Cache
Authors: W. Grignani(1), D. Santos(1), M. Kastriotou(2), C. Cazzaniga(2), D. Melo(3), F. Wrobel(4), L. Dilillo(1)
1. IES, University of Montpellier, CNRS, France,
2. STFC, United Kingdom,
3. Univali, Brazil,
4. Universite Montpellier, France
Presenting author: Wesley Grignani
This work evaluates a pipelined RISC-V SoC under neutron irradiation. We analyze the performance, resource utilization, and reliability trade-offs of integrated, hardened instruction cache configurations, demonstrating effective fault mitigation strategies for dependable applications.
PF-5
Receiver-State-Aware Adaptive Equalization for X-Ray Irradiated TSV Channels With ADC Radiation Effects
Authors: B. Liang(1)
1. Xidian University, China
Presenting author: Bo Liang
This paper proposes an adaptive equalization method for X-ray irradiated TSV channels with ADC degradation. The method is validated over 0-250 krad(Si), and it improves eye height by 10.9% and eye width by 25.1%.
CLICK HERE TO GO BACK TO TOP
Session G
PG-1
Optimizing Ce-doped Fiber-based Dosimetry through H2-Loading of Transport Fibers
Authors: L. Breccia(1), F. Fricano(1), D. Lambert(1), A. Morana(2), H. Boiron(3), A. Boukenter(2), H. El hamzaoui(4), Y. Ouerdane(2), B. Capoen(4), B. Mohamed(4), P. Paillet(5), S. Girard(2)
1. CEA/CESTA, France,
2. Université de Saint Etienne, France,
3. Exail, France,
4. University of Lille, France,
5. CEA, France
Presenting author: Letizia Breccia
We investigate how the H2 loading of the pure silica core fibers used as transport fibers for radioluminescence (RIL)- based dosimeters, allows reducing their radiation-induced attenuation and parasitic RIL and then improve sensor performance.
PG-2
Optical Fiber-based Dose Monitor for Very High Dose Rate X-ray Facilities
Authors: J. Vidalot(1), M. Coville(1), R. Rosch(1), M. Roche(1), D. Denis-petit(1), C. Varignon(1), I. Lantuéjoul(1), A. Morana(2), S. Girard(3), P. Paillet(1)
1. CEA, France,
2. Laboratory Hubert Curien, France,
3. Université de Saint Etienne, France
Presenting author: Jeoffray Vidalot
We investigate how the radiation induced attenuation in Ge-doped multimode optical fiber can be used to monitor radiation doses up to 280 Gy(SiO2) under very high dose rate conditions using MeV high intensity X-ray generator.
PG-3
Benchmarking Heavy‑ions Induced SEE on a COTS DC/DC Buck Converter at VHE Against Conventional Ion Irradiation Source
Authors: C. Altomare(1), G. Cucinella(1), M. Perelli(1), G. Longo(1), S. Talamo(1), G. Fontanella(2), M. Abdullahi(2), A. Portaluri(3), R. Mancini(4), S. Francola(3)
1. imt s.r.l., Italy,
2. Gran Sasso Science Institute, Italy,
3. Thales Alenia Space, Italy,
4. Thales Alenia Space Italy, Italy
Presenting author: Corrado Altomare
This work compares SEE responses in a COTS buck converter tested at HEARTS@CERN and GANIL facilities, supported by GEANT4 simulations assessing energy deposition, LET dependencies, and beam to device interaction to check for irradiations consistency.
PG-4
Characterization of a novel airborne secondary cosmic-ray detector AMORE at the Paul Scherrer Institute PSI
Authors: G. Auriemma(1), J. Tabbett(1), W. Hajdas(1), M. Gantert(1), M. Müller(1), M. Hildebrandt(1)
1. PSI-Paul Scherrer Institut, Switzerland
Presenting author: Gabriele Auriemma
A new compact airborne radiation monitor has been developed and characterized using proton irradiation and neutron source exposure at PSI. The instrument is intended to be deployed on commercial aircraft and stratospheric balloons.
PG-5
Feasibility Study of Soft Error Test Using Compact Neutron Sources Based on Wide-Energy SEU Cross Section Measurements
Authors: Y. Sunada(1), R. Kiuchi(1), H. Iwashita(1), Y. Hiroshima(1), K. Ishiguro(2), H. Sato(2), T. Kamiyama(2), M. Furusaka(2), Y. Kiyanagi(2)
1. NTT, Inc., Japan,
2. Graduate School of Engineering, Hokkaido University, Japan
Presenting author: Yuji Sunada
Feasibility of compact accelerator-driven neutron sources for SEU test was evaluated using continuous SEU cross sections from 10 meV to 100 MeV. Test accuracies were derived from the cross sections and neutron energy spectra.
PG-6
Event-to-Event Variability under Medium- and Very-High-Energy Heavy-Ion Irradiation
Authors: M. Bagatin(1), A. Waets(2), R. Garcia(2), S. Gerardin(3)
1. University of Padova, Italy, 2. CERN, Switzerland, 3. DEI – Padova University, Italy
Presenting author: Marta Bagatin
This work examines event-to-event variability in energy deposition for very-high-energy ions compared with lower-energy ions with similar LET, using Geant4 simulations. Lower-energy ions exhibit greater fluctuations and non-Gaussian tails, affecting single-event-effect interpretation in nanoscale devices.
PG-7
Temperature Dependence of Radiation-Induced Attenuation in cladding-depressed Ce/Gd co-doped optical fiber
Authors: C. Sadik(1), A. Morana(2), Y. Ouerdane(2), H. El hamzaoui(1), M. Bouet(1), V. Andrieux(1), A. Cassez(1), S. Girard(2), A. Boukenter(2), M. Bouazaoui(1), B. Capoen(1)
1. Université de Lille, France,
2. Université de Saint Etienne, France
Presenting author: Charbel Sadik
Optical fibered systems are attracting significant attention in radiation environments. The radiation-induced attenuation (RIA) of a depressed-cladding Ce/Gd co-doped core fiber was measured at different temperatures. The temperature effect is observed and the RIA is compared with similar fibers.
PG-8
Evaluation of TID-SEE Interaction in an SRAM-Based Dosimeter Under Proton Irradiation
Authors: M. Jo(1)
1. QRT, Korea, Republic of
Presenting author: Charbel Sadik
This work evaluates TID-SEE interaction in SRAM-based dosimeter under proton irradiation. Results indicate limited TID impact on SEU response, suggesting instead that displacement damage plays a dominant role in SEE sensitivity in the tested device.
PG-9
Impact of Bias Conditions on the Total Ionizing Dose Response of SOI PMOS Radiation Dosimeter On-Chip
Authors: J. Li(1), F. Liu(1), J. Li(1), C. Zhang(1)
1. Institute of Microelectronics of the Chinese Academy of Sciences, China
Presenting author: Jiaji Li
The back-gate transistors based on SOI wafers were designed and their TID response was measured under different biases for on-chip dosimeter applications. A maximum sensitivity of 131 mV/krad(Si) is achieved.
PG-10
Cost-Effective Multilayer Radiators for Soft X-Ray Transition Radiation Production: Experimental Validation at the ELSA Beamline
Authors: A. Gupta(1), S. Rajaram(1), C. Li(1), R. Pius(1), W. Pua(1), P. Bechtle(2), F. Bernlochner(2), C. Bespin(2), K. Desch(2), J. Dingfelder(2), F. Frommberger(2), S. Gürbüz(2), S. Laudage(2), S. Linden(2), R. Partzsch(2), D. Proft(2), K. Schmieden(2), J. Szela(1)
1. Centennial High School, USA,
2. Universität Bonn, Germany
Presenting author: Avin Gupta
We experimentally validated low-cost multilayer radiators for transition radiation emission under a 2.5 GeV electron beam at ELSA. Measured energy and angular distributions align with theoretical predictions, demonstrating the production of detectable photon yield.
PG-11
Binary Optical Encoding for Logarithmic Scaling of Sensor Count in Scintillation Imaging
Authors: T. Xia(1), A. Ziegler(1), L. Perez moran(1), E. Parasol(1)
1. Dawson College, Canada
Presenting author: Evan Parasol
We achieve logarithmic scaling of silicon photomultiplier (SiPM) sensor count with respect to pixel detector imaging resolution by segmenting a polyvinyl toluene (PVT) scintillator detection region into optically isolated regions with binary-encoded readout.
CLICK HERE TO GO BACK TO TOP
Session H
PH-1
Effects of Neutron-Induced Displacement Damage on Gate Leakage and Reliability of p-GaN HEMTs
Authors: C. Yang(1), C. Yeh(1), D. Chao(1), J. Liang(1)
1. National Tsing Hua University, Taiwan
Presenting author: Der-Sheng Chao
This work investigates the gate reliability of p-GaN HEMTs under neutron irradiation. TDDB results show that displacement damage increases gate leakage, shifts VTH positively via VGa defects, alters failure mechanisms and reduces projected lifetime.
PH-2
Understanding the fraction of ionizing energy losses in silicon after fast neutron impact
Authors: R. Mihai(1), B. Bergmann(2), P. Burian(3), P. Smolyanskiy(1)
1. Institute of Experimental and Applied Physics, Czech Technical University in Prague, Czech Republic,
2. Insitute of Experimental and Applied Physics, Czech Technical University in Prague, Czech Republic,
3. University of West Bohemia in Pilsen, Czech Republic
Presenting author: Radu Emanuel Mihai
We present measurements of ionizing energy losses in silicon following neutron collisions over 200 keV to 15 MeV, using a Timepix3 detector at LANSCE. Results are compared against theoretical partition functions, yielding refined empirical fits.
PH-3
First Insight on TID Effect in Al2O3 Gate GaN nMOS Transistor
Authors: T. Labau(1), R. Escoffier(2), A. Michez(3), J. Buckley(2)
1. CEA Leti, France,
2. Cea LETI, France,
3. Delphea, France
Presenting author: Timothée Labau
This study investigates X-ray TID effect on Al2O3 gate nMOS GaN transistors where worst-case bias differ from silicon MOSFETs, it is drain bias. The mechanism is competition between electron injection and hole trapping around Al2O3/GaN interface.
PH-4
Resilience and Structural Evolution of Graphene-Based and Advanced Materials for Devices in Extreme Environments
Authors: M. Guazzelli(1), S. Masunaga(1), K. Araki(2), M. Nakamura(2), J. Oliveira(3), V. Aguiar(3), N. Medina(3), E. Chinaglia(1), S. Alberton(3), F. Ferreira(4), M. Escote(4), A. Vilas-bôas(1), L. Avanzi(1)
1. FEI University Center, Brazil,
2. IQUSP, Brazil,
3. IFUSP, Brazil,
4. UFABC, Brazil
Presenting author: Marcilei Aparecida Guazzelli
This study examines 14 MeV neutron and 60 MeV ³⁵Cl irradiation effects on HOPG and ML-rGO. HOPG degrades structurally , while ML-rGO shows partial reorganization and enhanced metallic conduction, highlighting their potential for radiation-tolerant applications.
PH-5
Low-Frequency Noise and Total-Ionizing-Dose Radiation Effects in Enhancement-Mode GaN Power HEMTs
Authors: S. Shorina(1), A. Billa(1), H. Parra(1), Z. En Xia(1), D. Fleetwood(2), I. Chatterjee(3)
1. University of Central Florida, USA,
2. Vanderbilt University, USA,
3. Airbus Defense and Space, Germany
Presenting author: Zhang En Xia
Total ionizing dose irradiation induces rapid initial threshold voltage shifts and modifies DC and low-frequency noise characteristics in p-GaN gate GaN HEMTs after OFF-state bias irradiation, indicating radiation-induced trap buildup and increased defect-related carrier fluctuations.
PH-6
Investigation of Dose Enhancement Effect Occurring during High-Energy X-ray Irradiations
Authors: G. Carpentier(1), J. Boch(2), F. Saigné(2), T. Maraine(2), F. Wrobel(2), L. Dilillo(2), J. Favrichon(1), E. Cantrel(1)
1. CEA, France,
2. University of Montpellier, France
Presenting author: Guillaume Carpentier
Monte Carlo simulations performed with PHITS allowed the modelling of high energy X-ray generators. Dose enhancement effect is studied, and results are compared to experimental data obtained on MOS capacitors for two gate metallization.
PH-7
4H-SiC PN Diodes as Neutron and Alpha Detectors: Allpix2 Simulation and Experimental Characterisation
Authors: J. Kulda(1), V. Kracmar(1), C. Lauerman(1), M. Marcisovska(1), R. Novotny(1), P. Svihra(1)
1. FNSPE CTU in Prague, Czech Republic
Presenting author: Radek Novotny
4H-SiC PN diodes are characterised as fast neutron detectors for radiation-hard environments. Charge transport is validated via alpha source measurements; Allpix2 Monte Carlo neutron response matrices spanning 2–21 MeV are presented as predictive simulation results.
PH-8
Effects of Total Ionization Dose in mCNT and DNA Wrapped mCNT Devices
Authors: M. Chapa(1), N. Vaidyam(1), H. Barnaby(1), J. Hihath(1)
1. Arizona State University, USA
Presenting author: Miguel Chapa
Carbon nanotube devices were exposed to Co-60 gamma radiation up to 1 Mrad. Electrical and Raman analyses show ssDNA-wrapped CNTs devices exhibit reduced resistance changes and defects, indicating enhanced structural stability and improved radiation tolerance.
PH-9
Preliminary studies of the impact of terrestrial cosmic radiation on superconducting qubits in Brazil
Authors: S. Alberton(1), A. Vilas-bôas(2), V. Aguiar(3), C. Federico(4), F. Rouxinol(5)
1. University of Sao Paulo, Institute of Physics, Brazil,
2. Centro Universitário FEI, Brazil,
3. University of Sao Paulo, Brazil,
4. Instituto de Estudos Avançados, Brazil,
5. State University of Campinas, Brazil
Presenting author: Saulo Alberton
In this work, we investigate the link between atmospheric radiation and quasiparticle-induced decoherence in superconducting qubits, and develop a prototype to indirectly measure the average number of radiation-induced phonons in quantum device chip substrates.
PH-10
Comparative analysis of electron, proton and neutron irradiation damage in GaAs flexible triple-junction solar cells
Authors: A. Aierken(1), B. Jinshun(1), L. Xuefei(1), W. Gang(1), W. Degui(1)
1. Guizhou Normal University, China
Presenting author: Bi Jinshun
This paper presents a detailed investigation of the effects of 1 MeV electron, 1 MeV neutron, and 3 MeV proton irradiations on the output performance of flexible inverted metamorphic GaInP/GaAs/InGaAs triple-junction solar cells.
PH-11
Characterization of Defect Sub-Clusters for Radiation Effects Analyses
Authors: B. Hehr(1)
1. Sandia National Laboratories, USA
Presenting author: Brian Hehr
A physics-informed methodology is described for decomposing complex, recoil-induced defect cluster morphologies into constituent sub-cluster production functions usable in radiation effects analyses. Silicon is considered as an exemplar medium.
PH-12
Total Ionizing Dose Influence on Trapping Activities in Nanoscale CMOS
Authors: Y. Chubenko(1), S. Ramazanoglu(1), A. Michalowskaforsyth(1)
1. Graz University of Technology, Austria
Presenting author: Yurii Chubenko
Continuous monitoring of discrete charge trapping events in nanoscale n-channel MOSFET under TID stress.
PH-13
Evolution of Low-Frequency Noise with TID in IBM Gate-All-Around Stacked Nanosheet Transistors
Authors: J. Neuendank(1), D. Hughart(2), A. Vidana(3), C. Mckay(2), K. Sapkota(3), R. Arghavani(2), H. Barnaby(4)
1. Arizona State University, USA,
2. Sandia National Laboratories, USA,
3. Sandia National Labs, USA,
4. ASU, USA
Presenting author: Jereme Neuendank
Substrate-isolated IBM gate-all-around stacked nanosheet transistors are irradiated to a total ionizing dose of 100 Mrad(SiO2) using X-rays. Results show the DC response is tolerant to dose while low-frequency noise measurements reveal oxide damage post-irradiation.
PH-14
TID Effects and Modeling in CMOS at Cryogenic Temperatures
Authors: A. Urena(1), L. Artola(1), T. Nuns(1), S. Ducret(2)
1. ONERA, France,
2. Lynred, France
Presenting author: Alejandro Urena
This article presents the effects of TID at cryogenic temperatures and the recovery achieved through isochronous annealing cycles on a CMOS technology. A model of the physical mechanisms of TID-induced degradation is proposed and implemented in Verilog-A for simulation.
CLICK HERE TO GO BACK TO TOP
Session I
PI-1
Development of a High-Sensitivity High-Pressure Ionization Chamber for Environmental Radiation Monitoring
Authors: L. Jinwon(1), J. Shin(1), H. Baek(1), S. Kim(1), M. Park(1), S. Park(1), S. Jeong(1), J. Heo(1), S. Choi(1)
1. Neosiskorea, Korea, Republic of
Presenting author:
A high-sensitivity HPIC demonstrated linear radiation response, stable plateau characteristics, and reliable directional response, confirming its technical feasibility and supporting further development toward standardized validation and long-term field deployment.
PI-2
Measurement of Galactic Cosmic Ray Composition in Low Earth Orbit with the SATRAM Timepix Detector
Authors: S. Gohl(1), B. Bergmann(2)
1. IEAP, CTU in Prague, Czech Republic
2. Insitute of Experimental and Applied Physics, Czech Technical University in Prague, Czech Republic
Presenting author:
Launched in 2013, SATRAM is a single-layer Timepix radiation monitor on Proba‑V measuring Galactic Cosmic Rays in low‑background orbit regions. Stopping‑power spectra at high incident angles resolve ions up to Z=11 via Bethe–Bloch analysis formally.
PI-3
Validation of Proton Energy Loss in Regolith Simulants Using PSI-PIF Beam Tests and MRADSIM Simulations
Authors: Z. Güzel(1), M. Waqas(1), A. Alpat(2), T. Wusimanjiang(1), C. Okan(3), D. Dolek(1), E. Alpat(1), M. Casu(4), R. Orrù(4), G. Cao(4), W. Hajdas(5), R. Marcinkowski(6)
1. Beamide S.r.l., Italy,
2. INFN, Beamide S.r.l., Italy,
3. Beamide S.r.l., Turkey,
4. University of Cagliari, Italy,
5. Paul Scherrer Institute, SE2S, Switzerland,
6. SE2S, Switzerland
Presenting author: Zehra Güzel
PSI-PIF proton-beam measurements were benchmarked against GEANT4 11.3.0-based MRADSIM simulations for MGS-1 and JEZ-1 Martian regolith simulants. Calibrated LYSO responses validated proton energies, while chi-square analysis identified the best-converging hadronic model for Martian shielding studies.
PI-4
Nuclear Spallation Efficiency: Target Material Optimization
Authors: B. Buluttekin(1), D. Karaoğluol(1), E. Kırdemir(1), M. Musluoğlu(1), Y. Başman(1), Z. Çabukel(1), E. Özaktaş(1)
1. BL4S(2025 Winner), Turkey
Presenting author: Ela Nur Kırdemir
We study nuclear spallation using beams at 1–10 GeV directed onto tungsten & copper targets of varying lengths. Results show where spallation predominantly occurs and how target geometry, beam polarity, energy and different particles affect spallation.
PI-5
Solar Energetic Particle Measurements: Improving Radiation Monitor Response Functions with Pulse Shape Analysis
Authors: Q. Gibaru(1), P. Caron(1), S. Bourdarie(1)
1. ONERA, France
Presenting author: Quentin Gibaru
Pulse shape analysis is used to improve the response of a SSD space radiation monitor for the measurement of solar energetic particles, by removing cross-contamination between particles of different Z depositing the same energy.
PI-6
Energetic Electrons Measure with MeDDEA Solar Flare Hard X-ray Spectrometer on Board the PADRE CubeSat along its Polar Orbit
Authors: D. Renaud(1), O. Limousin(1), A. Claret(1), G. Marc(1), S. Christe(2), N. Godbole(2), K. Gregory(2), N. Saghafi(2), S. Krucker(3), M. Stiefel(3), A. Caspi(4), C. Moeckel(5), J. Martinez Oliveros(5), S. Perez-piel(5), E. Warren(5), C. Smith(5), A. Stratton(5)
1. CEA Saclay, France,
2. NASA, USA,
3. FHNW, Switzerland,
4. SWRI, USA,
5. UCB/SSL, USA
Presenting author: Diana Renaud
PADRE CubeSat studies intense solar flares directivity. Its continuous operation enables unique characterization of space radiation environment, using indirect measurements to reconstruct electron spectra and characterize orbital radiation flux in polar orbit.
PI-7
In-Flight Validation of the Scalable Radiation Monitor on the International Space Station
Authors: M. Patecki(1), M. Marek(1), K. Bresler-przybyl(2), K. Sielewicz(1), M. Mrozowski(1)
1. SigmaLabs, Poland,
2. Warsaw University of Technology and SigmaLabs, Poland
Presenting author: Marcin Patecki
The RadMon-on-ISS experiment validated the Scalable Radiation Monitor as a compact technology demonstrator for in-flight radiation awareness, showing stable long-term operation onboard the ISS and delivering meaningful measurements of both cumulative dose and single-event activity.
PI-8
Radiation Field Monitoring in LEO Using a Timepix-based X-ray/Gamma-ray Imager on VZLUSAT-2
Authors: K. Sýkorová(1), D. Hladik(1), D. Doubravova(1), C. Granja(1), J. Jakubek(1), T. Baca(2), V. Marsikova(3), Z. Matej(3), V. Daniel(4), A. Inneman(3)
1. Advacam s.r.o., Czech Republic,
2. Czech Technical University, Czech Republic,
3. Rigaku Innovative Technologies Europe s.r.o., Czech Republic,
4. VZLU AEROSPACE a.s., Czech Republic
Presenting author: Kateřina Sýkorová
X-ray/Gamma-ray Imager onboard VZLUSAT-2 enabled long-term radiation monitoring in LEO, resolving spatial, temporal, and particle-type variations. Radiation maps and regional particle composition analysis were used to characterise the radiation environment.
PI-9
MRADSIM-SPACE Update: Integration of GCR and Geomagnetic Shielding Forecasting
Authors: D. Pelosi(1), A. Alpat(2), M. Orcinha(2), Z. Guzel(3), M. Waqas(3), T. Wisumanjiang(3)
1. University of Perugia and INFN Sezione di Perugia, Italy,
2. INFN Sezione di Perugia, Italy,
3. BEAMIDE SRL, Italy
Presenting author: David Pelosi
We present an extension of MRADSIM-SPACE with internally integrated Galactic cosmic-ray flux forecasting and geomagnetic shielding, enabling the computation of dosimetric quantities for space mission scenarios. The framework supports time-dependent analyses across multiple nuclei species.
PI-10
Shields-1 in Polar Low Earth Orbit Observes Most Energetic Solar Particle Event since 2005
Authors: D. Thomsen(1), D. Voloshin(2), J. Cutler(2), J. Minow(3)
1. NASA Langley Research Center, USA,
2. University of Michigan, USA,
3. NASA, USA
Presenting author: Donald Thomsen
The Shields-1 spacecraft was operating with dosimeters in polar low earth orbit at 290 km altitude on 11 November 2025 and measuring dose from the most energetic solar particle event in 19 years.
PI-11
Stratospheric Balloon Flight Radiation Dosimetry with Timepix2 Lite Detector
Authors: O. Pavlas(1), B. Bergmann(2), M. Malich(2), P. Smolyanskiy(2), H. Cintas(2), S. Gohl(2), L. Krivanekova(3), D. Braunn(3), J. Kneißl(3), T. Döhring(3), G. Hildenbrand(3), J. Kościelniak (4), G. Spirytulski (4), W. Kajfosz(4)
1. Institute of Experimental and Applied Physics Czech Technical University in Prague, 110 00 Prague, Czech Republic and also with Faculty of Electrical Engineering, Czech Technical University in Prague, 166 27 Prague, Czech Republic, Czech Republic,
2. Institute of Experimental and Applied Physics Czech Technical University in Prague, Czech Republic,
3. TH Aschaffenburg – University of Applied Sciences, Germany,
4. AGH University of Krakow, Poland
Presenting author: Ondrej Pavlas
Two stratospheric balloon missions – ASTRABAX (34.4 km) and OURANOS (27.3 km) – used a Timepix2 Lite detector to measure TID dose rates, stopping power spectra, and particle flux profiles, consistent with the Pfotzer-Regener maximum.
PI-12
Directional Analysis of Space Radiation in LEO Using the Timepix3 Detector Onboard OneWeb JoeySat
Authors: T. Kuchař(1), C. Granja(1), J. Jakůbek(1), L. Marek(1)
1. ADVACAM, Czech Republic
Presenting author: Tobiáš Kuchař
We demonstrate that a single-layer Timepix3 detector in LEO resolves directional signatures of space radiation without a stacked telescope. Mean elevation angle mapping reveals a pronounced proton and heavy-ion enhancement over the South Atlantic Anomaly.
PI-13
Physics-based Modeling of Radiation Environment in Electric Aviation for Beamline Test Protocols
Authors: A. Sengupta(1), K. Gnerlich(1), I. Koch(1), S. Kazula(1)
1. Deutsche Zentrum für Luft- und Raumfahrt (DLR), Germany
Presenting author: Arijit Sengupta
Reliability of electric aircraft systems is addressed by physics-based modeling of the aviation radiation environment, and their influence in the design of a semi-accelerated beamline testing for stochastic failures in power electronic components are discussed.
PI-14
Detection of bit-flip effects induced by ultra-short ultra-intense LWFA electron beam in SRAM module
Authors: I. Zymak(1), M. Nevrkla(1), J. Šišma(1), F. Vitha(1), S. Lorenz(1), A. Zymakova(1), C. Lazzarini(1), R. Versaci(2), G. Grittani(1)
1. ELI ERIC ELI Beamlines, Czech Republic,
2. ELI ERIC, Czech Republic
Presenting author: Illia Zymak
Bit flip effects induced by ultrashort GeV-range LWFA electron beams and reference continuous X-ray radiation are observed in conventional static memory modules, making LPA a candidate for R2E and proxy SEE tests of electronics.
CLICK HERE TO GO BACK TO TOP
Session J
PJ-1
Print Setting Optimization of 3D-Printed CubeSat Structures for Radiation Resistance in High-Energy Space Environments
Authors: M. Dai(1)
1. The Overlake School, USA
Presenting author: Matthew Dai
Print parameter effects on radiation shielding are analyzed in context of additively manufactured PEEK and PEI CubeSat structures in MEO. Simulations exhibit diminished returns across increasing infill density and face layers, supporting mass optimization possibilities.
PJ-2
A simple node-based estimation of the equivalent LET of a laser pulse for correlation with heavy ion SEU threshold in SRAM devices
Authors: M. Sacristan barbero(1), V. Pouget(2), F. Saigné(3), R. Garcia(4)
1. Arquimea Connect S.L., Spain,
2. IES-CNRS, France,
3. Université de Montpellier, France,
4. CERN, Switzerland
Presenting author: Vincent Pouget
We present the correlation of laser and heavy ion SEU data obtained on different SRAM cell technologies ranging from 16 to 110nm and derive a simple relationship between the technology node and the radius of integration to be used in the calculation of the laser equivalent LET for estimating the SEU threshold of SRAM cells. Diffusion-based modelling is used to relate differences in the laser and ion cross-sections to laser spot size effects.
PJ-3
Use of Dry Ice to Extend the Post-Irradiation Test Time of nMOS Devices
Authors: S. Witczak(1), J. Salzman(2), D. Fleetwood(3)
1. Northrop Grumman, USA,
2. Teledyne Micropac, USA,
3. Vanderbilt University, USA
Presenting author: Steven Witczak
The use of dry ice to mitigate annealing and extend the storage time between irradiation and electrical test is assessed for several types of nMOS devices. Implications for hardness assurance testing are discussed.
PJ-4
Comparing Single Event Effect Laser-Equivalent LET Thresholds with Heavy-Ion LET Thresholds for Six Unique Analog Devices
Authors: L. Andrus(1), C. Saltonstall ii(1), C. Gauderon(1), K. Leeson(1), D. Leonhardt(1)
1. Sandia National Laboratories, USA
Presenting author: Liam Andrus
Single event effect laser-equivalent linear energy transfer thresholds are compared to heavy-ion thresholds for six unique microelectronic devices. Assuming proper laser parameters are used, we observe agreement between laser and heavy-ion thresholds for all devices.
PJ-5
Standardizing AI Reliability: Community Benchmarks for AI Radiation Testing
Authors: H. Quinn(1), P. Rech(2), M. Wirthlin(3), L. Entrena(4), A. Barnard(5), S. Esquer(6), S. Guertin(7), W. Robinson(8), G. Swift(9)
1. Air Force Research Laboratory, USA,
2. University of Trento, Italy,
3. Brigham Young University, USA,
4. Universidad Carlos III, Spain,
5. Stellenbosch University, South Africa,
6. Vanderbilt University, USA,
7. NASA JPL, USA,
8. GTRI, USA,
9. Swift Engineering & Radiation Services, USA
Presenting author: Heather Quinn
To ensure the resilience of AI systems in space and safety-critical applications, a standardized approach to radiation testing is crucial. We propose developing community benchmarks, including standard models, inputs, and metrics, to qualify AI reliability.
PJ-6
Revisiting Petersen’s Proton SEU Figure-of-Merit Using Exponential Cross-Section Curve Model
Authors: F. Ozaki(1), K. Takeuchi(1), A. Ikuta(2), D. Kobayashi(2)
1. Research and Development Directorate, Japan Aerospace Exploration Agency, Japan,
2. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Japan
Presenting author: Fumihiko Ozaki
Petersen showed a correlation to convert heavy-ion direct-ionization SEU rates to proton indirect-ionization SEU rates. This revisit reveals that the conversion factor depends only on proton flux, reflecting similarities in neutron- and proton-induced SEU mechanisms.