PROGRAM

SESSION H

Basic Mechanisms of Radiation Effects

Chairs: Rosine Germanicus & Ian Dawson

BACK TO PROGRAM

H-1

Radiation Induced Hot Carrier Injection in 0.35-μm CMOS Technology

Authors: K. Sarbandi(1), G. Borghello(1), M. Macaluso(1), A. Ocarino(1), G. Ripamonti(1), S. Michelis(1), F. Faccio(1)
1. CERN, Switzerland

Presenting author: Kourosh Sarbandi

Unexpected Hot-Carrier-Injection accelerated annealing was measured in pMOS transistors in 0.35μm technology irradiated at ultra-high doses. This mechanism has been identified as the underlying cause of failures observed in DC-DC converters for High Luminosity LHC.

H-2

Update on Recommendations for ELDRS Test Specification Based on Material Geometry

Authors: C. Chang(1), H. Barnaby(2), K. Holbert(2), T. Kirby(1), L. Ho(1)
1. Arizona State University, USA,
2. ASU, USA

Presenting author: Ching-Tao Chang

This work shows conventional bipolar ELDRS criteria can misidentify CMOS dose-rate effects. Using LM124, FOXFET, and MOSCAP data with first-order kinetics model, we show annealing after LDR is required to distinguish ELDRS from time-dependent behavior.

H-3

Mechanisms of Electrical Rapid Annealing as Applied to Bulk FinFETs for TID Recovery

Authors: T. Kirby(1), A. Vidana(2), C. Mckay(2), D. Hughart(2), H. Barnaby(1)
1. Arizona State University, USA,
2. Sandia National Laboratories, USA

Presenting author: Tyler Kirby

The mechanisms of the electrical rapid annealing (ERA) technique for TID recovery are explored. Its application and efficacy when applied to bulk FinFET technologies is discussed. Fowler-Nordheim (F-N) tunneling is proposed as the primary mechanism.

H-4

Ionizining Energy Losses after Neutron Interactions in Silicon Carbide

Authors: L. Javora(1), B. Bergmann(2), P. Smolyanskiy(1), T. Slvavíček(1), B. Zatko(3), A. Sagatova(4)
1. Institute of Experimental and Applied Physics, Czech Republic,
2. Insitute of Experimental and Applied Physics, Czech Technical University in Prague, Czech Republic,
3. Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia,
4. Slovak University of Technology in Bratislava, Slovakia

Presenting author: Lukas Javora

Timepix3 sensor is used to measure spectra inside neutron radiation fields with different energies. Nuclear recoils are used to analyze ionizing and non-ionizing energy losses in silicon carbide.

H-5

Radiation Effects of Heavy Ions in Hydrogen-Terminated Diamond Field-Effect Transistors

Authors: Y. Liu(1), X. Li(2), W. Fu(3), S. Zhong(3), X. Zhang(1), C. Peng(3), Z. Zhang(3), H. Zhang(3), Z. Lei(3), T. Ma(3), J. Yang(1)
1. School of Nuclear Science, Energy and Power Engineering, Shandong University, China,
2. The Department of Information Engineering, University of Padova, Italy,
3. State Key Laboratory of Reliability Technology for Electronic Components, China Electronic Product Reliability and Environmental Testing Research Institute, China

Presenting author: Jia-yue Yang

Radiation effects induced by heavy ions are investigated in H-diamond FETs. The synergistic effect of interface and bulk defects degrade the device responses with worst-case tolerance in biased devices.

POSTERS

PH-1

Effects of Neutron-Induced Displacement Damage on Gate Leakage and Reliability of p-GaN HEMTs

Authors: C. Yang(1), C. Yeh(1), D. Chao(1), J. Liang(1)
1. National Tsing Hua University, Taiwan

Presenting author: Der-Sheng Chao

This work investigates the gate reliability of p-GaN HEMTs under neutron irradiation. TDDB results show that displacement damage increases gate leakage, shifts VTH positively via VGa defects, alters failure mechanisms and reduces projected lifetime.

PH-2

Understanding the fraction of ionizing energy losses in silicon after fast neutron impact

Authors: R. Mihai(1), B. Bergmann(2), P. Burian(3), P. Smolyanskiy(1)
1. Institute of Experimental and Applied Physics, Czech Technical University in Prague, Czech Republic,
2. Insitute of Experimental and Applied Physics, Czech Technical University in Prague, Czech Republic,
3. University of West Bohemia in Pilsen, Czech Republic

Presenting author: Radu Emanuel Mihai

We present measurements of ionizing energy losses in silicon following neutron collisions over 200 keV to 15 MeV, using a Timepix3 detector at LANSCE. Results are compared against theoretical partition functions, yielding refined empirical fits.

PH-3

First Insight on TID Effect in Al2O3 Gate GaN nMOS Transistor

Authors: T. Labau(1), R. Escoffier(2), A. Michez(3), J. Buckley(2)
1. CEA Leti, France,
2. Cea LETI, France,
3. Delphea, France

Presenting author: Timothée Labau

This study investigates X-ray TID effect on Al2O3 gate nMOS GaN transistors where worst-case bias differ from silicon MOSFETs, it is drain bias. The mechanism is competition between electron injection and hole trapping around Al2O3/GaN interface.

PH-4

Resilience and Structural Evolution of Graphene-Based and Advanced Materials for Devices in Extreme Environments

Authors: M. Guazzelli(1), S. Masunaga(1), K. Araki(2), M. Nakamura(2), J. Oliveira(3), V. Aguiar(3), N. Medina(3), E. Chinaglia(1), S. Alberton(3), F. Ferreira(4), M. Escote(4), A. Vilas-bôas(1), L. Avanzi(1)
1. FEI University Center, Brazil,
2. IQUSP, Brazil,
3. IFUSP, Brazil,
4. UFABC, Brazil

Presenting author: Marcilei Aparecida Guazzelli

This study examines 14 MeV neutron and 60 MeV ³⁵Cl irradiation effects on HOPG and ML-rGO. HOPG degrades structurally , while ML-rGO shows partial reorganization and enhanced metallic conduction, highlighting their potential for radiation-tolerant applications.

PH-5

Low-Frequency Noise and Total-Ionizing-Dose Radiation Effects in Enhancement-Mode GaN Power HEMTs

Authors: S. Shorina(1), A. Billa(1), H. Parra(1), Z. En Xia(1), D. Fleetwood(2), I. Chatterjee(3)
1. University of Central Florida, USA,
2. Vanderbilt University, USA,
3. Airbus Defense and Space, Germany

Presenting author: Zhang En Xia

Total ionizing dose irradiation induces rapid initial threshold voltage shifts and modifies DC and low-frequency noise characteristics in p-GaN gate GaN HEMTs after OFF-state bias irradiation, indicating radiation-induced trap buildup and increased defect-related carrier fluctuations.

PH-6

Investigation of Dose Enhancement Effect Occurring during High-Energy X-ray Irradiations

Authors: G. Carpentier(1), J. Boch(2), F. Saigné(2), T. Maraine(2), F. Wrobel(2), L. Dilillo(2), J. Favrichon(1), E. Cantrel(1)
1. CEA, France,
2. University of Montpellier, France

Presenting author: Guillaume Carpentier

Monte Carlo simulations performed with PHITS allowed the modelling of high energy X-ray generators. Dose enhancement effect is studied, and results are compared to experimental data obtained on MOS capacitors for two gate metallization.

PH-7

4H-SiC PN Diodes as Neutron and Alpha Detectors: Allpix2 Simulation and Experimental Characterisation

Authors: J. Kulda(1), V. Kracmar(1), C. Lauerman(1), M. Marcisovska(1), R. Novotny(1), P. Svihra(1)
1. FNSPE CTU in Prague, Czech Republic

Presenting author: Radek Novotny

4H-SiC PN diodes are characterised as fast neutron detectors for radiation-hard environments. Charge transport is validated via alpha source measurements; Allpix2 Monte Carlo neutron response matrices spanning 2–21 MeV are presented as predictive simulation results.

PH-8

Effects of Total Ionization Dose in mCNT and DNA Wrapped mCNT Devices

Authors: M. Chapa(1), N. Vaidyam(1), H. Barnaby(1), J. Hihath(1)
1. Arizona State University, USA

Presenting author: Miguel Chapa

Carbon nanotube devices were exposed to Co-60 gamma radiation up to 1 Mrad. Electrical and Raman analyses show ssDNA-wrapped CNTs devices exhibit reduced resistance changes and defects, indicating enhanced structural stability and improved radiation tolerance.

PH-9

Preliminary studies of the impact of terrestrial cosmic radiation on superconducting qubits in Brazil

Authors: S. Alberton(1), A. Vilas-bôas(2), V. Aguiar(3), C. Federico(4), F. Rouxinol(5)
1. University of Sao Paulo, Institute of Physics, Brazil,
2. Centro Universitário FEI, Brazil,
3. University of Sao Paulo, Brazil,
4. Instituto de Estudos Avançados, Brazil,
5. State University of Campinas, Brazil

Presenting author: Saulo Alberton

In this work, we investigate the link between atmospheric radiation and quasiparticle-induced decoherence in superconducting qubits, and develop a prototype to indirectly measure the average number of radiation-induced phonons in quantum device chip substrates.

PH-10

Comparative analysis of electron, proton and neutron irradiation damage in GaAs flexible triple-junction solar cells

Authors: A. Aierken(1), B. Jinshun(1), L. Xuefei(1), W. Gang(1), W. Degui(1)
1. Guizhou Normal University, China

Presenting author: Bi Jinshun

This paper presents a detailed investigation of the effects of 1 MeV electron, 1 MeV neutron, and 3 MeV proton irradiations on the output performance of flexible inverted metamorphic GaInP/GaAs/InGaAs triple-junction solar cells.

PH-11

Characterization of Defect Sub-Clusters for Radiation Effects Analyses

Authors: B. Hehr(1)
1. Sandia National Laboratories, USA

Presenting author: Brian Hehr

A physics-informed methodology is described for decomposing complex, recoil-induced defect cluster morphologies into constituent sub-cluster production functions usable in radiation effects analyses. Silicon is considered as an exemplar medium.

PH-12

Total Ionizing Dose Influence on Trapping Activities in Nanoscale CMOS

Authors: Y. Chubenko(1), S. Ramazanoglu(1), A. Michalowskaforsyth(1)
1. Graz University of Technology, Austria

Presenting author: Yurii Chubenko

Continuous monitoring of discrete charge trapping events in nanoscale n-channel MOSFET under TID stress.

PH-13

Evolution of Low-Frequency Noise with TID in IBM Gate-All-Around Stacked Nanosheet Transistors

Authors: J. Neuendank(1), D. Hughart(2), A. Vidana(3), C. Mckay(2), K. Sapkota(3), R. Arghavani(2), H. Barnaby(4)
1. Arizona State University, USA,
2. Sandia National Laboratories, USA,
3. Sandia National Labs, USA,
4. ASU, USA

Presenting author: Jereme Neuendank

Substrate-isolated IBM gate-all-around stacked nanosheet transistors are irradiated to a total ionizing dose of 100 Mrad(SiO2) using X-rays. Results show the DC response is tolerant to dose while low-frequency noise measurements reveal oxide damage post-irradiation.

PH-14

TID Effects and Modeling in CMOS at Cryogenic Temperatures

Authors: A. Urena(1), L. Artola(1), T. Nuns(1), S. Ducret(2)
1. ONERA, France,
2. Lynred, France

Presenting author: Alejandro Urena

This article presents the effects of TID at cryogenic temperatures and the recovery achieved through isochronous annealing cycles on a CMOS technology. A model of the physical mechanisms of TID-induced degradation is proposed and implemented in Verilog-A for simulation.