PROGRAM

SESSION DW

Data Workshop

Chairs: Steven Witczak & Peter Svihra

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DW-1

High Energy Proton Irradiation of HENON AMR Vector Magnetometer MAGIC

Authors: X. Yu(1), T. Oddy(1), P. Brown(1), D. Rizzieri(2), V. Gupta(3), M. Trillo(2), J. Eastwood(1)
1. Imperial College London, United Kingdom, 2. Argotec S.R.L., Italy, 3. ESA, Netherlands

Presenting author: Xun Yu

This paper presents the SEE response of the three axis vector AMR magnetometer MAGIC under $200MeV$ proton irradiation, up to $10^{11}/cm^2$ fluence. MAGIC, onboard ESA HENON for space weather forecasting, satisfies mission radiation requirements.

DW-2

Radiation Characterisation and Failure Modes of the Raspberry Pi Compute Module 4 and Associated CMOS Imagers

Authors: R. Parker(1), B. Taylor(1)
1. University of Auckland, New Zealand

Presenting author: Rhys Parker

This study evaluates the radiation tolerance of the Raspberry Pi Compute Module 4, Sony IMX219, and Sony IMX477 sensors. Total ionising dose testing reveals I2C degradation, hardware failures, and significant post-irradiation annealing recovery capabilities.

DW-3

Heavy ion SEE Tests of MRAM, NOR-Flash and SDRAM COTS memories

Authors: M. Steffens(1), S. Hoeffgen(1), J. Kuhnhenn(1), F. Siebert(1), A. Zentgraf(1), G. Furano(2), M. Poizat(3), M. Tali(3)
1. Fraunhofer FKIE, Germany,
2. ESA/TEC-EDD, Netherlands,
3. ESA, Netherlands

Presenting author: Michael Steffens

This paper presents Single Event Effect test results with heavy ions on COTS memories of various technologies: MRAM, NOR-Slash and SDRAM.

DW-4

Heavy ion single-event effects on commercial microcontrollers for small satellites

Authors: R. Sharp(1), S. Curado(1), J. Rushton(2), V. Gupta(3)
1. Radtest Ltd, United Kingdom,
2. Rushton Electronics Ltd, United Kingdom, 3. ESA, Netherlands

Presenting author: Richard Sharp

The full heavy ion SEE testing of three types of COTS microcontroller is described. The selection process is summarised and the three types identified, along with the results and a comparison of their performance.

DW-5

HIAF-SIBL: The Space Irradiation Beam Line at the Heavy Ion Accelerator Facility in Canberra, Australia

Authors: M. Lakelin(1), D. Bennett(1), T. Mcgoram(1), C. Notthoff(1), P. Linardakis(1), S. Saji(1)
1. Australian National University, Australia

Presenting author: Misty Lakelin

HIAF-SIBL was purpose-built in 2023 to supply radiation testing for the Australian space industry. In three years its capabilities have continually developed and its recognition grown exponentially both locally and globally.

DW-6

Sensitivity of Versal XilSEM Scrubber under Very-High-Energy Heavy-Ions Irradiation

Authors: S. Francola(1), P. Andrea(1), M. Abdullahi(2), G. Fontanella(2), C. Altomare(3), S. Gerardin(4), R. Mancini(5)
1. Thales Alenia Space, Italy,
2. Gran Sasso Science Institute, Italy,
3. imt s.r.l., Italy,
4. University of Padua, Italy,
5. Thales Alenia Space Italy, Italy

Presenting author: Stefano Francola

Very-high-energy heavy-ions irradiation of XilSEM scrubber library from AMD on Versal, implementing the two available RPU-based and soft-core MicroBlaze-based designs, was performed. Data on radiation-induced SEFI showed a larger sensitivity in the RPU-based solution.

DW-7

Single Event Effects testing of DDR SDRAMs and analysis of Stuck Bits susceptibilities

Authors: B. Vandevelde(1), L. Gouyet(2), L. Coïc(2), S. Dubos(3), A. Rousset(4), C. Boatella_polo(5)
1. TRAD, Tests and radiations, France,
2. TRAD, Test and radiations, France,
3. TRAD, Tests & Radiations, France,
4. TRAD, France,
5. ESA, Netherlands

Presenting author: Samuel Dubos

The susceptibility of several DDR memories to stuck bits was assessed through SEE campaigns, under protons and heavy ions to deepen the understanding of such failure modes and identify trends of sensitivity.

DW-8

First Heavy-Ion SEE Characterization of the GateMate FPGA with Architecture-Level Interpretation

Authors: A. Moreno(1), P. Urban(2), V. Lück(3), C. Oliver(3), A. Vorobev(3)
1. TESAT / Airbus DS, Germany,
2. CologneChip, Germany,
3. Tesat-Spacecom, Germany

Presenting author: Alberto Moreno

First heavy-ion SEE results for the European 28-nm GateMate FPGA show no destructive events, effective CRAM mitigation by background scrubbing, and evidence that observed SEFIs are dominated by shared global resources.

DW-9

Compendium of very high total dose test data for nuclear fusion applications

Authors: R. Sharp(1), A. Crombie(1), S. Curado(1), N. Gupta(1), A. Katoch(1), M. Molina(1), J. Praill(1), R. Krutz(2), G. Schoonhoven(2), G. Wilde(2), A. Attfield(2)
1. Radtest Ltd, United Kingdom,
2. UKAEA RACE, United Kingdom

Presenting author: Richard Sharp

A large programme of total dose testing of electronic components for use in future fusion applications is described, with exposures of 1 MGy and above. A summary of the results is provided in compendium format.

DW-10

Single Events effects Characterization of the LX2160 Space Processor

Authors: A. Al youssef(1), O. Bonnet(1), S. Mariottini(1), M. Bendahhou(1), M. Blanco(1)
1. Teledyne e2v, France

Presenting author: Ahmad Al Youssef

Heavy ion testing of the Teledyne LX2160 Space processor showed no SEL up to 91 MeV.cm²/mg, extremely rare L2 cache errors at harsh conditions, robust SEFI recovery, no cache MBU, no SEU with ECC

DW-11

Comparative study of Permanent Degradation in Passivated Graphene FETs under Gamma and Proton Irradiation

Authors: Y. Lee(1), J. Park(1), H. Woo(1), C. Kang(1)
1. Korea Atomic Energy Research Institute, Republic of Korea

Presenting author: Yongsu Lee

Permanent degradation in Al2O3-passivated graphene FETs under proton and gamma-ray irradiation is investigated. Universal p-type doping and non-linear degradation, governed by displacement damage, ionizing dose, and defect annealing, are observed.

DW-12

Radiation Evaluation of the Texas Instruments TPS7H6200-SEP Radiation-Tolerant 52A GaN Half Bridge Power Stage

Authors: T. Lew(1), A. Marinelarena(1), M. Trevino(1)
1. Texas Instruments, USA

Presenting author: Tyler Lew

Single Events Effect (SEE) characterization and total ionizing dose (TID) results for the TPS7H6200-SEP 15V, 52A GaN half-bridge power stage are summarized, showing robust SEE performance to LETEFF=55 MeV-cm2/mg and excellent TID behavior to 30krad(Si).

DW-13

Radiation Evaluation of the Texas Instruments TPS7H5100-SEP Radiation-Tolerant Dual Phase D-CAP+™ Controller

Authors: A. Marinelarena(1), T. Lew(1), E. Johnson(1)
1. Texas Instruments, USA

Presenting author: Anthony Marinelarena

Single-Event Effects (SEE) characterization and Total Ionizing Dose (TID) results for the TPS7H5100-SEP 15V dual phase D-CAP+™ controller are summarized, showing very robust SEE performance up to LETEFF=48MeV-cm2/mg and excellent TID behavior up to 30krad(Si).

DW-14

Radiation Hardness of SiPMs for space-based detectors in Low Earth Orbit

Authors: G. Fontanella(1)
1. Gran Sasso Science Institute, Italy

Presenting author: Giulio Fontanella

Silicon photomultipliers were characterized before and after Co-60 gamma and 100 MeV proton irradiation showing stable fundamental parameters, predictable dark count rate increase, and consistent thermal behavior.

DW-15

Resolving Beam Energy Inconsistency Using Single Event Transient Measurement at HIMAC

Authors: R. Nakajima(1), S. Mandai(2), S. Taniguchi(2), A. Matsumoto(2), H. Nakamoto(2), S. Onoda(3), J. Furuta(4), K. Kobayashi(5)
1. The University of Osaka, Japan,
2. Kyoto Institute of Technology, Japan,
3. National Institutes for Quantum Science and Technology, Japan,
4. Okayama Prefectural University, Japan,
5. Kyoto Institure of Technology, Japan

Presenting author: Ryuichi Nakajima

We resolve HIMAC Xe-ion energy discrepancies (188.6 MeV/n) by accounting for the monitor's acrylic cap, and use SET pulse width distributions to validate the energy and reveal fluence overestimation from low-LET secondary particles.

DW-16

SEE and TID screening approach for COTS qualification into a Radiation-Tolerant Catalog (R2COTS)

Authors: S. Dubos(1), L. Boukhana(2), C. Mamet(3), N. Gutierrez(3), A. Rousset(2), T. Torloting(3), F. Malou(3)
1. Trad Tests & Radiations, France,
2. TRAD, France,
3. CNES, France

Presenting author: Samuel Dubos

An optimized SEE and TID screening process, developed with CNES under its RCS program, is presented to consolidate a catalog of radiation-tolerant COTS devices (R2COTS) as a cost-effective alternative for NewSpace actors.

DW-17

Radiation Tolerance Study of Low-voltage Electrical Devices at CERN

Authors: E. Cano gonzalez(1), M. Liu(1)
1. CERN, Switzerland

Presenting author: 

Using mixed field irradiation tests of assembled low-voltage electrical devices up to 10 MGy, dose dependent degradation effects were analyzed to provide novel data to support replacement strategies at CERN beamline and radiation-controlled facilities.

DW-18

Evaluation of Radiation Robustness of Power MOSFETs in ST BCD8s-SOI technology

Authors: A. Benfante(1), D. Crippa(1), I. Mirabella(1), S. Pappalardo(1), A. Veggetti(1), M. Bagatin(2), S. Gerardin(2)
1. STMicroelectronics, Italy,
2. University of Padova, Italy

Presenting author: Antonio Benfante

Power MOSFETs in STMicroelectronics BCD8s-SOI technology are evaluated for radiation hardness. The study tests different N and P channel LDMOS devices under heavy-ions and neutrons, aiming to develop a robust radiation-hardened library for space applications.

DW-19

SEE Test Results of Microchip’s Radiation Hardened Point-of-Load Power Switch LX7722

Authors: J. Heun(1), S. Das(1), R. Stevens(1), K. Yip(1), D. Johnson(1), O. Mansilla(1)
1. Microchip Technology, USA

Presenting author: Jackson Heun

Microchip Technology has developed the radiation hardened point-of-load power switch, LX7722, to protect satellite FPGAs and DDR SDRAM units from destructive overcurrent events. This paper examines destructive and non-destructive Single Event Effect test results.

DW-20

Pulsed-Laser-Induced Single Event Transients and Sensitivity Analysis in Microelectronic Devices

Authors: R. Basak(1), D. Hiemstra(2), L. Chen(1)
1. University of Saskatchewan, Canada,
2. MDA Space Ltd., Canada

Presenting author: Li Chen

Single-event effects (SEEs) caused by ionizing radiation are a persistent concern in the reliability of modern microelectronics. This work presents laser induced single event transients (SETs) and sensitivity for a low-voltage shunt regulator.

DW-21

Heavy-ion Single Event Effects Characterization of the HMC438 Divide-by-5 Static Divider

Authors: R. Dungan(1), A. Gazdzhyan(1), B. Fischer(1), M. Francisco(1), R. Oviedo(1), J. Ng(1)
1. Northrop Grumman, USA

Presenting author: Rutger Dungan

The HMC438 divide-by-5 static divider was tested for single event effects using heavy-ion irradiation. Cross sections were determined over a range of LET values. Weibull fits were made to the data and SEE rates determined.

DW-22

TID Response Characterization of the LM309H Voltage Regulator

Authors: A. Noguera cundar(1), J. Cardenas(1), D. Hiemstra(2), L. Chen(1)
1. University of Saskatchewan, Canada,
2. MDA space, Canada

Presenting author: Jaime Cardenasn

TID response of the LM309H voltage regulator was characterized under low dose-rate 60Co irradiation by independently varying input voltage and load current, revealing pronounced degradation at both low supply voltage and low output current.

DW-23

Proton and Heavy Ion Irradiation Testing of 1 Mbit SRAM CY62128EV30

Authors: C. Lin(1), C. Chen(2), H. Huang(2), C. Lin(2), C. Tseng(2), Y. Tseng(2)
1. Academia Sinica, Taiwan,
2. Taiwan Space Agency, Taiwan

Presenting author: Chih-hsun Lin

CY62128EV30 was tested under 200 MeV proton and heavy-ion irradiation. SEUs were observed, SEL appeared above 16 MeV·cm^2/mg, and predicted low-Earth-orbit SEU rates were 2–4 events/day/device, whereas the SEL rate is very low.

DW-24

TID prospection of COTS for future high power space battery systems

Authors: D. Gomez toro(1), I. Baptiste(2)
1. DLR, Germany,
2. DLR (German Aerospace Center), Germany

Presenting author: Daniel Gomez Toro

In order to mitigate space debris caused by battery failures in future payloads with batteries in them, a prospection of components off-the-shelf was done. This components could potentially ensure critical safety functions in future missions.

DW-25

Radiation test of a Silicon Sensing CRM200 Gyroscope

Authors: H. Sedlmayr(1), F. Hacker(1), K. Kunze(1), A. Chumakova(2), M. Levantino(2), A. Dittwald(3)
1. DLR – RM, Germany,
2. ESRF, France,
3. Helmholtz-Zentrum Berlin für Materialien und Energie, Germany

Presenting author: Hans-Juergen Sedlmayr

In order to identify the radiation performance of the Silicon Sensing CRM200 Gyro, a TID and single-event effect tests with pulsed X-Rays and protons were performed. The results are presented in this paper.

DW-26

DSA504RT – Microchip Low-Power, Low Jitter, Six-output Clock Generator : Radiation results

Authors: G. Bourgcazan(1), B. Treuillard(1), L. Montagner(2), D. Dangla(3), P. Fournier(2), E. Leduc(1)
1. Microchip Technology Nantes, France,
2. Microchip Technology Rousset, France,
3. CNES, France

Presenting author: Guillaume BourgCazan

This paper summarizes the results of Single Event Effects (SEE) and Total Ionizing Dose (TID) testing performed on the Microchip DSA504RT low-power, low-jitter, six-output programmable clock generator.

DW-27

Statistical Computation of Large LM124 Datasets from SPA Laser In-Focus Point Scanning and Defocused Widefield Illumination

Authors: C. Chong(1), A. Qureshi(2), J. Rushton(3), A. Crombie(1), R. Sharp(1)
1. Radtest Ltd, United Kingdom,
2. Rushton Electronics Ltd, United Kingdom, 3. Rushton Electronics, United Kingdom

Presenting author: Chris Chong

Interpreting large data can be daunting. We took the approach of utilizing unsupervised machine learning techniques to analyse large datasets obtained from in-focus laser beam scanning over decapped LM124 and effective waveform from defocused beam.

DW-28

Commissioning and Dosimetric Characterization of a Novel Convergent Four-Source Co-60 Gamma Irradiation Laboratory

Authors: P. Gallus(1), A. Jakovec(1), K. Karásek(1), O. Konček(1), M. Semmler(1)
1. UJP PRAHA a.s., Czech Republic

Presenting author: Petr Gallus

Commissioning of a unique four-source Co-60 gamma irradiation laboratory with convergent geometry focusing radiation into a common irradiation region is presented. Initial dosimetric characterization after commissioning in April 2026 include mapping, scatter evaluation and active device measure- ments.

DW-29

Single Event Upset Characterization of the Versal® Adaptive SoC CLBs for various SEE Mitigation Schemes Using Proton Irradiation

Authors: D. Hiemstra(1), N. Hu(1)
1. MDASpace, Canada

Presenting author: David Hiemstra

Proton induced SEU cross-sections of the Versal® Adaptive SoC Programmable Logic Configurable Logic Blocks for various SEE Mitigation Schemes are presented.

DW-30

Design and Response Evaluation of a Brazilian Proton Burst Detection System for Satellite Radiation Monitoring

Authors: A. Vilas bôas(1), P. Soares(2), C. Knebel bravo(2), S. Alberton(3), T. Silva(4), H. Gulino(2), R. Mansano(2), L. Zambom(5), M. Guazzelli(6), M. Grossmann(7), B. Sanches(2), S. Finco(8)
1. FEI – Fundação Educacional Inaciana “Padre Sabóia de Medeiros”, Brazil,
2. Poli, Universidade de São Paulo, Brazil,
3. University of Sao Paulo, Institute of Physics, Brazil,
4. FEI, Brazil,
5. FATEC, Brazil,
6. Centro Universitário FEI, Brazil,
7. Paul Scherrer Institute, Switzerland,
8. Centro de Tecnologia da Informação Renato Archer, CTI, Brazil

Presenting author: Alexis Cristiano Vilas Bôas

A particle detection system developed in Brazil, integrating the SAMPA front-end chip, was experimentally characterized under proton bursts up to 142 MeV, demonstrating suitable temporal response, linearity, and burst-width performance for space radiation monitoring applications.