PROGRAM
SESSION D
Radiation Effects in Devices & ICs
Chairs: Li Chen & Corinna Martinella
D-1
On the Limits of TID Tolerance in Logically Scaled 3-D NAND Flash Memory
Authors: M. Kumar(1), H. Ur rahman(1), I. Chatterjee(2), B. Ray(3)
1. Colorado State University, USA
2. Airbus, Germany
3. Colorado State University-Fort Collins, USA
Presenting author: Mondol Anik Kumar
This work experimentally evaluates TID tolerance in logically scaled 3-D NAND under default and optimal reads. Following tolerance limits were observed: QLC ≈7 krad(Si), TLC ≈30 krad(Si), and MLC 60 krad(Si) at 0.2% ECC threshold.
D-2
Displacement Damage Effects in a 3-nm bulk FinFET Technology
Authors: J. Kronenberg(1), Y. Xiong(2), X. Zhao(1), S. Tolson(1), N. Dodds(3)
1. Vanderbilt University, USA
2. Sandia National Laboratory, USA
3. Sandia National Lab, USA
Presenting author: Jenna Kronenberg
Displacement damage effects are investigated along with SRAM cell stability in a 3-nm bulk FinFET technology. Heavy-ion irradiations were performed to induce weak bits in SRAM arrays. Results show cumulative damage effects as the primary mechanism for the weak bit behavior.
D-3
Total Ionizing Dose Response of a Dynamic Comparator in 22-nm FD-SOI
Authors: J. Zhao(1), Z. Li(2), Q. Ma(1), M. Gorbunov(3), Y. Qing(1), J. Prinzie(1), P. Leroux(1)
1. KU Leuven, Belgium
2. IMEC/ KU LEUVEN, Belgium
3. Imec, Belgium
Presenting author: Jinghao Zhao
Gaussian-CDF analysis of a 22-nm FD-SOI dynamic comparator irradiated to 20 Mrad(Si) shows a negative, frequency-dependent switching-point shift and a strong high-dose transition-width increase, with broadening further dependent on input common-mode voltage and clock frequency.
D-4
Impact of Total Ionizing Dose on 128-Layer 3-D TLC NAND Flash Memory: Endurance and Data Retention
Authors: W. Yuhang(1), L. Hao(1), L. Chaoming(1), H. Mingxue(1)
1. Harbin institute of techology, China
Presenting author: Wang Yuhang
This paper demonstrate that the irradiated 3-D NAND Flash exhibit significant degradation in both endurance and retention characteristics. The sequence in which P/E cycling stress and irradiation are applied profoundly impacts the data retention characteristics.
D-5
Impact of HTGB Pre-Stress on the TID-Induced Degradation and Failure of p-GaN HEMTs
Authors: M. Alam(1), G. Vignon(2), O. Perrotin(3), V. Rustichelli(1), M. Matmat(1), F. Coccetti(1)
1. IRT Saint Exupéry, France
2. TRAD, France
3. ALTER Technology, France
Presenting author: Maroun Alam
This work investigates the impact of HTGB pre-stress on TID response of p-GaN HEMTs. Electrical aging induces strong degradation and early failures in specific technologies, while others remain stable, highlighting the role of conduction mechanisms.
POSTERS
PD-1
Impact of TID on SEU Hardened Flip-Flop Structures Caused by SET Pulse Broadening in a 65 nm FD-SOI Process
Authors: S. Mandai(1), R. Nakajima(2), S. Taniguchi(1), H. Nakamoto(1), A. Matsumoto(1), S. Sugitani(1), J. Furuta(3), K. Kobayashi(4)
1. Kyoto Institute of Technology, Japan
2. The University of Osaka, Japan
3. Okayama Prefectural University, Japan
4. Kyoto Institure of Technology, Japan
Presenting author: Shuhei Mandai
This study evaluates TID effects on soft error mitigation in flip-flops. While the tolerance of the guard-gate design degrades due to SET pulse broadening, the stacked structure maintains high SEU tolerance and robustness against TID.
PD-2
Total Ionizing Dose Effects on DC and RF Performances of 22 nm FDSOI nMOSFETs
Authors: M. Chen(1), Y. Huang(1), F. Liu(1), W. Lu(1)
1. Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics of the Chinese Academy of Sciences, China
Presenting author: Mengting Chen
Total ionizing dose effects on 22 nm FDSOI RVT and SLVT nMOSFETs are investigated. Residual fT degradation after removing Vth shift was governed by gm in both, especially at low overdrive and in shorter channels.
PD-3
Analysis of TID-Induced Error Mechanisms in 58-nm NOR Flash Memory
Authors: T. Matsunaga(1), K. Sugai(2), M. Yano(2), M. Hashimoto(1)
1. Kyoto University, Japan
2. Winbond Electronics Corporation Japan, Japan
Presenting author: Tadashi Matsunaga
This paper investigates TID-induced error mechanisms in 58-nm NOR flash memory under read-only and erase/program modes, revealing erase-failure behavior and power-of-two error periodicity. The periodicity is attributable to degradation of thick-gate-oxide multiplexers.
PD-4
Neutron-Induced Degradation Mechanisms in NiO/β-Ga2O3 Heterojunction Diodes
Authors: X. Li(1), Y. Liu(2), S. Zhong(3), G. Andreetta(4), C. Peng(3), T. Ma(3), S. Bonaldo(4), A. Paccagnella(4)
1. China Electronic Product Reliability and Environmental Testing Research Institute, Italy
2. School of Nuclear Science, Energy and Power Engineering, Shandong University, China
3. China Electronic Product Reliability and Environmental Testing Research Institute, China
4. University of Padova, Italy
Presenting author: Xing Li
14 MeV neutron irradiation degraded NiO/β-Ga2O3 heterojunction diodes through carrier removal and deep defects. At 1×1014 n/cm2, current density decreased 50.3%, Ron,sp increased 149%, and DLTS revealed a neutron-induced trap at EC−0.72 eV.
PD-5
Thick Oxide-Related Total-Ionizing Dose Effects in 7-nm FinFET technology
Authors: M. Gorbunov(1), A. Caglar(2), M. Van de burgwal(2), L. Berti(2)
1. Imec, Belgium,
2. imec, Belgium
Presenting author: Maxim Gorbunov
We study the Total Ionizing Dose (TID) Effects in Shallow Trench Isolation, which affect the performance of high-ohmic resistors, bipolar junction transistors and FinFETs. We discuss the experimental data for 7-nm FinFET technology.
PD-6
TID Radiation Effects on the Piezoresistive Coefficients of 0.18 μm CMOS Transistors
Authors: O. Bonfanti(1), N. Roisin(2), T. Klauner(1), D. Flandre(1)
1. UCLouvain (ICTEAM), Belgium,
2. Aerospacelab, Belgium
Presenting author: Ottilie Bonfanti
This work investigates total ionizing dose effects on piezoresistive coefficients in 0.18 µm n- and p-MOSFETs up to 1000 ppm and 86 krad(Si). Results show limited TID dependence, confirming robustness for strain-sensitive CMOS circuits design.
PD-7
Impact of Total Ionizing Dose (TID) on Proton-Induced Single Event Effect(SEE)s in a Commercial DDR5 SDRAM
Authors: D. Bae(1), J. Suh(1), M. Jo(2), H. Kim(1), S. Kim(3), K. Lee(1), K. Kim(1), K. Lee(1), Y. Kim(1)
1. QRT, Republic of Korea
2. QRT Inc., Republic of Korea
3. Sogang University, Republic of Korea
Presenting author: Dongwoo Bae
This work examines TID–SEE interaction in commercial DDR5. Gamma irradiation to 100 krad(Si) induced retention degradation, while subsequent proton testing revealed two radiation-induced events, showing no dependence on accumulated dose for this device under test.
PD-8
Impact of Ionizing Radiation and Displacement Damage on Mo-SiNx Granular Metals
Authors: M. Meyerson(1), L. Biedermann(1), M. Mcgarry(1), R. Jacobs-gedrim(1), C. Smyth(1), S. Gilbert(1), D. Hughart(1), M. Landi(1)
1. Sandia National Laboratories, USA
Presenting author: Melissa Meyerson
Mo-SiNx granular metal devices exhibited minimal changes in current, Poole-Frenkel activation energy, and conduction barrier at low electric field from 1 Mrad(SiO2) gamma radiation and a non-monotonic decrease in resistance in response to displacement damage.
PD-9
High-Dose Total Ionizing Dose Effects in Commercial 4H-SiC MOSFETs and Alternative Power Devices
Authors: V. Kotagama(1), S. Kibal(2), R. Oliver(2), V. Kilchytska(3), V. Shash(1), M. Antoniou(1), A. Renz(1), P. Gammon(1)
1. University of Warwick, United Kingdom
2. University of Cambridge, United Kingdom
3. UCLouvain, Belgium
Presenting author: Virendra Malin Kotagama
This study compares radiation-induced degradation in devices, showing MOS-based technologies suffer bias-dependent threshold voltage shifts from oxide charge trapping, while JFETs remain stable; trench SiC and Si IGBTs exhibit performance, with partial recovery after annealing.
PD-10
Characterization of TID-Induced Leakage Current in 28-nm p-MOSFETs
Authors: G. Andreetta(1), L. Gelmi(2), E. Vallicelli(3), M. De matteis(3), A. Lai(4), A. Paccagnella(1), S. Mattiazzo(1), S. Bonaldo(1)
1. University of Padova, Italy
2. University of Pavia, Italy
3. University of Milano Bicocca, Italy
4. National Institute for Nuclear Physics (INFN) Cagliari, Italy
Presenting author: Gabriele Andreetta
This work investigates the TID-induced leakage current increase in p-channel MOSFETs. Unlike n-channel devices, ionizing radiation primarily enhances leakage between the drain diffusion and the n-well, resulting in a drain-to-bulk current component.
PD-11
Total-Ionizing-Dose Characterization of a 17–41 GHz GaAs pHEMT Low-Noise Amplifier
Authors: W. Yang(1), X. Pan(1), W. Liu(1), P. Zhou(2), C. Wang(3), W. Liu(1)
1. Nanjing University of Aeronautics and Astronautics, China
2. State Key Laboratory of Millimeter Waves, Southeast University, China
3. Chenghua Wang and Weiqiang Liu are with the College of Integrated Circuits, China
Presenting author: Weifeng Yang
Board-level Co-60 γ-ray TID characterization of a 17–41 GHz GaAs pHEMT LNA, evaluated over 17–27 GHz to 1 Mrad(Si), shows minor current fluctuation and nearly unchanged S-parameters and noise figure, indicating weak TID sensitivity.
PD-12
Investigation of Double-Peak Single Event Transients in SiGe LNAs: The Role of Parasitic PDN Resonance
Authors: X. Pan(1), W. Yang(1), J. Zhang(2), W. Liu(1), H. Guo(3), C. Wang(1), W. Liu(1), Y. Zhao(4)
1. Nanjing University of Aeronautics and Astronautics, China
2. Xidian University, China
3. Northwest Institute of Nuclear Technology, China
4. Beijing Microelectronics Technology Institute, China
Presenting author: Weifeng Yang
This paper investigates SET responses in an X-band SiGe HBT LNA under pulsed-laser and heavy-ion irradiation, revealing parasitic PDN resonance as the mechanism responsible for the anomalous single-peak and double-peak spectra.
PD-13
Unexpected Gate Current Leakage in Thin-Gate-Oxide LDMOS After TID Irradiation: Characterization and Mechanism
Authors: L. Hu(1), L. Shu(1), Y. Li(2), T. Zhang(1), S. Yue(1), X. Cai(1), L. Duo-li(1), J. Gao(1), B. Li(1)
1. Institute of Microelectronics of the Chinese Academy of Sciences, China
2. Beijing University of Posts and Telecommunications, China
Presenting author: Li-Bin Hu
This work first reports an unexpected increase in gate leakage current under normal operating gate voltage for thin-gate-oxide LDMOS devices following 60Co γ-ray irradiation. The Mechanism is analyzed through TCAD and low-frequency noise.
PD-14
Investigating the Effect of Si-substrate Thickness on Reliability of FinFET-Based SRAM PUFs
Authors: J. Shao(1), R. Song(1), D. Liu(1), Y. Chi(1), B. Liang(1), J. Chen(1), C. Hu(1), B. Liu(1), J. Zeng(1), Y. Wang(1)
1. College of Computer Science and Technology, National University of Defense Technology, China
Presenting author: Ruiqiang Song
FinFET-based SRAM PUF test chips with different Si-substrate thicknesses were irradiated. Experimental results indicate that the gate oxide defects dominate TID-induced PUF reliability degradation, while the substrate defects dominate heavy ion-induced PUF reliability degradation.
PD-15
Investigation of Total Ionizing Dose Effects on an HPK 3.2 PiN Diode Using 10 keV X-Ray Irradiation
Authors: T. Silva(1), A. Vilas bôas(1), F. Palomo Pinto(2), M. Pavanello(1), R. Giacomini(1), N. Medina(3), G. Saito(3), M. Leite(3), M. Guazzelli(1)
1. FEI – Fundação Educacional Inaciana;Padre Sabóia de Medeiros; Brazil
2. Universidad de Sevilla, Spain
3. Instituto de Física da Universidade de São Paulo, Brazil
Presenting author: Thalia Silva
This work investigates TID effects from 10 keV X-rays on an HPK-3.2-PiN, used as an LGAD reference. Results up to 611 krad highlight the dominant role of interface-related degradation mechanisms impacting detector reliability in radiation environments.