PROGRAM

SESSION C

Photonics, Optoelectronics & Sensors

Chairs: Ali Jouni & Jochen Kuhnhenn

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C-1

Analysis of Ionizing Radiation Effects on Global Shutter Pixels with Pinned Photodiodes

Authors: P. Santos(1), P. Leroux(2), G. Meynants(1)
1. KU Leuven, Belgium
2. Leuven University, Belgium

Presenting author: Pedro Santos

The article presents four 10 x 10 µm² global shutter pixel designs with radiation hardening by design (RHBD) devices and studies their total ionizing dose (TID) effects under X-Ray and Gamma radiation.

C-2

Radiation Effects on 55% Efficiency High-Power Laser Power Converters

Authors: G. Ciachera(1), M. Darnon(2), L. Weninger(1), M. Roche(3), M. Garllardin(3), D. Lambert(3), S. Girard(1)
1. Laboratoire Hubert Curien, France
2. CNRS, France, 3. CEA, France

Presenting author: Geoffrey Ciachera

We characterized the radiation tolerance of laser power converters to X-rays up to 1.7 MGy and to 14 MeV neutrons up
to 1011 n/cm2. We measured no significant degradation opening the way to power beaming harsh environments

C-3

Effects of Cerium and Lanthanum Co-Doping on the Gamma-Ray Radiation Resistance of 2 μm Holmium-Doped Fibers

Authors: J. Huynh(1), I. Kašík(2), V. Olšanský(3), D. Chvátil(3), G. Chayran(1), Z. Záborská(2), M. Kamrádek(2), J. Aubrecht(2), P. Vařák(2), L. Maršálek(2), O. Podrazký(2), I. Bartoň(2)
1. Hilase centre, Institute of Physics ASCR, Czech Republic
2. Institute of Photonics and Electronics of the Czech Academy of Sciences, Czech Republic
3. Nuclear Physics Institute of the Czech Academy of Sciences, Czech Republic

Presenting author: Jaroslav Huynh

We evaluate radiation-induced attenuation in 2µm Holmium-doped fibers. Findings demonstrate that volumetric thermal load dictates radiation hardness: Cerium drives active photo-thermal bleaching in power amplifiers, while optimized Lanthanum ensures superior passive stabilization for cold components.

C-4

Aluminium Coated Single- and Multi-Mode Fibers for High Temperatures and High Doses

Authors: H. Boiron(1), A. Morana(2), A. Steib(1), R. Pouyet(3), A. Monteville(3), P. Guitton(1), S. Chaton(1), G. Melin(1), T. Robin(1), S. Girard(4)
1. Exail, France
2. Laboratory Hubert Curien, France
3. Photonics Bretagne, France
4. Université de Saint Etienne, France

Presenting author: Hugo Boiron

We investigate the combined temperature (25°C and 200°C) and radiation effects (up to 1 MGy of 40 keV X-rays) on the radiation-induced attenuation levels of fluorine-doped optical fibers with Al coatings.

POSTERS

PC-1

Proton and Neutron Irradiation Effects on the Dark Count Rate in 110 nm CMOS SPADs

Authors: R. Luigi(1)
1. INFN, Italy

Presenting author: Rignanese Luigi

110 nm CMOS SPADs were irradiated with protons and neutrons up to 4 x 109 neq/cm2. Online DCR monitoring reveals linear increase (5–7 cps/µm2 per 4 x 109 neq/cm2). Following off-line DCR measurements show ~40% room-temperature annealing recovery

PC-2

Radiation-Induced Dark Current Simulation Framework

Authors: N. Bensoussan(1), S. Urbano-rodriguez(1), J. Krynski(1), V. Goiffon(1), P. Goux(2), A. Le roch(1), A. Antonsanti(1), F. Lemmel(2), V. Affatato(2)
1. ISAE-SUPAERO, France
2. ESA-ESTEC, Netherlands

Presenting author: Noah Bensoussan

We present a novel dark current simulation framework for irradiated image sensors. Implemented in ESA Pyxel, it combines preradiation variability with displacement damage and total ionizing dose effects, reproducing measured dark current distributions across technologies.

PC-3

Radiation-Induced Degradation and Masking Effects in Quantum Entropy Sources for Space Applications

Authors: J. Cueto(1), J. Oliveros fernández(2), M. Rudé(3), D. Tulli(3), E. Cordero(4)
1. TAS Spain, Spai
2. Thales Alenia Space in Spain, Spain
3. Quside, Spain
4. Alter Technology Spain, Spain

Presenting author: Juan Cueto

Quantum Key Distribution (QKD) networks enable secure data transfer using quantum physics. As satellite-based QKD expands, it is necessary to assess the robustness of quantum components when exposed to space radiation environments.

PC-4

Effects of 10-keV X-ray and 1.8-MeV Proton Irradiation on the Refractive Index and Absorption Coefficient of Silicon Dioxide

Authors: H. Dattilo(1), J. Vielmette(1), N. Karom(1), X. Onwu(1), A. Sternberg(1), J. Trippe(1), D. Black(2), J. Black(2), D. Fleetwood(1), R. Schrimpf(1), S. Weiss(1), J. Nogan(2), R. Reed(1))
1. Vanderbilt University, USA
2. Sandia National Laboratories, USA

Presenting author: Hannah Dattilo

Custom designed devices irradiated with 10-keV X-rays and 1.8-MeV protons showed no change in SiO2 refractive index up to 210Mrad(SiO2), demonstrating that even high levels of radiation-induced trapped charge do not change SiO2 optical properties.