PROGRAM

SESSION B

Single Event Effects: Devices & ICs

Chairs: Pierre Garcia & Bharat Bhuvag

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B-1

New Insight on Single Event Leakage Current degradation of SiC Schottky Diode

Authors: J. Sauveplane(1), G. Chaumont(2), F. Lanois(2), G. Dutrannoy(2), A. Carvalho(3), C. Binois(3)
1. CNES, France
2. ST Microelectronics, France
3. Airbus, France

Presenting author: Jean-baptiste Sauveplane

This study investigates leakage current degradation in SiC Schottky diodes under heavy ion irradiation. The research employs an innovative heavy ion test methodology combined with life test. A new mechanism for leakage current degradation is proposed.

B-2

The Angular Dependence of Single-Event Burnout in Silicon Carbide MOSFETs

Authors: J. Vielmette(1), A. Javanainen(2), K. Niskanen(2), A. Sternberg(1), D. Ball(1), M. Hu(3), S. Kosier(1), R. Schrimpf(1)
1. Vanderbilt University, USA
2. University of Jyväskylä, Finland
3. Vanderbilt, USA

Presenting author: Joshua Vielmette

The angular dependence of the single-event burnout (SEB) threshold voltage in SiC MOSFETs is reported. Increasing angle increases the voltage threshold for SEB, informing physical models of SEB in SiC.

B-3

Angular Effects on Single-Event Mechanisms in a Bulk GAAFET Technology

Authors: P. Oldiges(1), N. Domme(1), Y. Xiong(1), N. Myers(1), R. Arghavani(1)
1. Sandia National Laboratories, USA

Presenting author: Yoni Xiong

Single-event upset cross-section data on a bulk 3nm Gate-All-Around SRAM show dependence on the tilt and rotation angle of the heavy ion. Angular dependence decreases near the saturation cross-section due to multiple cell upsets.

B-4

Single Event Transient Responses of sub-20 nm FinFET node at Cryogenic Temperatures

Authors: S. Liu(1), T. Wang(1), C. Liu(1), C. Qi(1), C. Zeng(1), L. Yin(1), Y. Zhang(1), G. Ma(1), M. Huo(1)
1. Harbin Institute of Technology, China

Presenting author: Sijia Liu

This work developed an accelerator-compatible cryogenic setup to conduct heavy ion experiments, investigating the impact of the cryogenic temperature of 80 K on single event transient responses.

POSTERS

PB-1

Thermal Neutron Response of 65-nm Bulk SRAMs in Stacked Printed Circuit Board Configuration

Authors: M. Dentan(1), S. Moindjie(2), E. Atukpor(3), M. Cecchetto(4), J. Autran(5), D. Munteanu(2), R. Garcia(4), I. Slipukhin(4), G. Gasiot(6), P. Roche(6)
1. CEA; CERN, France
2. CNRS, France
3. Institut Laue-Langevin, France
4. CERN, Switzerland
5. Université de Rennes, France
6. STMicroelectronics, France

Presenting author: Martin Dentan

We performed SER characterization of 65-nm bulk SRAMs mounted in 6-stage stacked PCBs and subjected to thermal neutrons at ILL. We characterize and model the PCB neutron absorption to correctly extract the bit-flip cross section.

PB-2

Predictive Modeling of Single-Event Phase Displacement in LC-Tank Phase-Locked Loops Using an Extended Generalized Linear Framework

Authors: L. Nichols(1), J. Prinzie(2), D. Loveless(1)
1. Indiana University Bloomington, USA
2. KU Leuven, Belgium

Presenting author: Lucas Nichols

A generalized linear model for single-event transient propagation is extended to LC-tank PLLs by incorporating varactor and tank disturbance mechanisms. Model predictions are validated using 65-nm heavy-ion and pulsed-laser measurements, enabling identification of radiation-sensitive subcircuits.

PB-3

Single-Event Characterization of Phase Locked Loops

Authors: M. Strackx(1), D. Wouters(1), B. Van bockel(1), H. Marien(1), Y. Cao(1)
1. Magics Technologies, Belgium

Presenting author: Maarten Strackx

This work reviews single‑event-transient characterization of PLLs and proposes a direct TDC‑based method enabling picosecond‑resolution, wide‑range phase detection, and cycle‑slip monitoring. Heavy‑ion experiments show PLL perturbations from ~1° to beyond 360°, requiring large detector range.

PB-4

Multi-Cell Upsets in a 7-nm Commercial FinFET Technology

Authors: M. Gorbunov(1), M. Van de burgwal(2), L. Berti(2), T. Vervecken(3), D. Van nuffel(3), T. Schulte(3), J. Vanden berk(3), D. Geys(4)
1. Imec, Belgium
2. imec, Belgium
3. Magics Technologies NV, Belgium
4. MAGICS Instruments, Belgium

Presenting author: Maxim Gorbunov

We present the results of heavy ion and high-energy proton testing of several single- and dual-port SRAM blocks with different bitcell designs. We analyze the upset multiplicity distributions and error maps.

PB-5

Direct Comparison of Proton- and Neutron-induced Energy-dependent SEU Cross Sections in Bulk Planar SRAM-based FPGAs From 28 to 90 nm

Authors: R. Kiuchi(1), Y. Sunada(1), Y. Hiroshima(1), M. Tominaga(1), H. Iwashita(1), T. Ikeda(1), H. Sato(2), S. Takao(2), T. Matsuura(2), T. Kamiyama(2), M. Furusaka(2), Y. Kiyanagi(2)
1. NTT, Inc., Japan
2. Faculty of Engineering, Hokkaido university, Japan

Presenting author: Ryu Kiuchi

Proton-induced SEU cross sections in 28- to 90-nm bulk planar SRAM-based FPGAs were compared with neutron-induced cross sections. They agreed above 20 MeV, supporting interchangeable for evaluating SEU rates of sub-100-nm bulk planar SRAM devices.

PB-6

Timing characteristics of GaAs surface barrier detectors for heavy-ion detection

Authors: M. Pereira(1), A. Quivy(2), S. Alberton(2), N. Medina(3), E. Macchione(2), N. Added(2), V. Aguiar(2)
1. University of São Paulo, Brazil, 2. University of Sao Paulo, Brazil, 3. Instituto de Física da Universidade de São Paulo, Brazil

Presenting author: Vitor Aguiar

GaAs Schottky detectors were tested under heavy ion irradiation (¹H, ¹⁶O, ³⁵Cl, ⁶³Cu). Rise times down to 6.0 ns (~13 ns/mm) were achieved, outperforming silicon, demonstrating strong potential for fast timing applications in nuclear instrumentation.

PB-7

Improved LET and Flux Dosimetry for Heavy-Ion Beams Using a 40-nm COTS SRAM

Authors: M. Rezaei(1), B. Ferraz(2), F. Franco(3), R. Garcia(2), I. Slipukhin(2), J. Clemente(4)
1. Universidad Complutense de Madrid / Departamento de Arquitectura de Computadores y Automática / Facultad de Informática, Spain
2. CERN, Switzerlan
3. Universidad Complutense de Madrid, Spain
4. Universidad Complutense Madrid, Spain

Presenting author: Bruno Ferraz

This paper presents a comparison of the flux and LET dosimetry for heavy ions of several radiation facilities using two SRAMs. A new method for performing such a task is also be introduced.

PB-8

Radiation Effects on DDR4 DRAM Under Cryogenic Conditions: Temperature-Dependent Analysis of Proton- and Gamma-Ray-Induced Errors

Authors: I. Kanghyeon(1)
1. Gyeongsang National University, Korea, Republic of

Presenting author: Im Kanghyeon

DDR4 DRAMs were irradiated with protons and gamma rays at 77, 153, and 300 K. Results showed cryogenic error sensitivity and indicated that proton-induced hard errors were more directly associated with displacement damage than TID.

PB-9

Combined Effects of Deep N-well and Layout on Charge-Sharing-Induced SEU Susceptibility in Sub-20nm FinFET DICE DFFs

Authors: J. Hu(1), G. Yu(2), Y. Chi(2), M. Tao(3), Y. Gao(2), J. Yang(3), D. Luo(2), B. Liang(2), J. Chen(2)
1. National University of Defense Technology, China
2. National University of Denfense Technology, China
3. Hunan University, China

Presenting author: Jiayi Hu

This study focuses on the charge-sharing-induced single-event upset (SEU) characteristics of DICE D flip-flops (DFFs) in sub-20 nm FinFET technology, clarifying the combined effects between deep N-well (DNW) and layout hardening techniques(common-drain).