PROGRAM

SESSION A

Single Event Effects: Mechanisms & Modelling

Chairs: Michael King & Victor Malherbe

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A-1

Predicting Proton SEU Cross-Sections From Heavy-Ion Test Results
Through Double Exponential Cross-Section Curve Modeling

Authors: K. Takeuchi(1), D. Kobayashi(1), F. Bezerra(2), F. Malou(2), J. Mekki(2)
1. Japan Aerospace Exploration Agency, Japan,
2. Centre national d’études spatiales, France

Presenting author: Kozo Takeuchi

An analytical model for proton-induced single-event upset cross-sections in SRAMs is presented using parameters extracted from heavy-ion data. Measurements on a 12-nm FinFET SRAM and literature data validate the model across technologies.

A-2

Predicting Terrestrial Neutron Soft Error Rates Using Threshold LET Values

Authors: S. Tolson(1), J. Kronenberg(1), X. Zhao(1), D. Ball(1), B. Bhuva(1)
1. Vanderbilt University, USA

Presenting author: Solomon Tolson

An empirical model for terrestrial neutron failure-in-time (FIT) rates as a function of threshold LET value is presented for multiple bulk FinFET technologies. Results show that all flip-flop (FF) designs lie on the same curve.

A-3

Pulse Quenching Effect Induced by Cryogenic Temperatures on DFF and Logic of CMOS Technology

Authors: A. Urena(1), L. Artola(1), G. Hubert(1), S. Ducret(2), V. Compain(2), C. Durnez(3), J. Mekki(3)
1. ONERA, France
2. Lynred, France
3. CNES, France

Presenting author: Alejandro Urena

This work presents the impact of cryogenic tempera- tures on SEU/SET sensitivity of a CMOS technology. Simulations exhibit unique pulse quenching effects at cryogenic temperature in the scope of readout integrated circuit for cooled infrared applications.

POSTERS

PA-1

Nonequilibrium Auger Generation Model for SEE Simulations in Wide-Bandgap Power Devices

Authors: A. Makihara(1), S. Kuboyama(1), M. Iwata(2), M. Takahashi(2), M. Midorikawa(2), T. Suzuki(2), N. Nemoto(2), H. Shindou(2), A. Michez(3), T. Labau(3), C. Marques(3), F. Wrobel(4), F. Saigné(4), J. Boch(4)
1. HIREC, Japan
2. JAXA, Japan
3. Delphea, France
4. Université de Montpellier, France

Presenting author: Satoshi Kuboyama

Nonequilibrium Auger generation model was successfully applied to describe the enhanced charge collection observed in SiC power devices. The applicability of the model was demonstrated for different types of diodes using the device simulator ECORCE.

PA-2

Particle hit scoring capabilities in the 5th generation of FLUKA.CERN for radiation effect simulations

Authors: D. Lucsanyi(1), G. Hugo(1), R. Garcia alia(1), F. Wrobel(2)
1. CERN, Switzerland
2. University of Montpellier, France

Presenting author: David Lucsanyi

Improved G4SEE simulation capabilities have been integrated into the fifth generation of FLUKA, and demonstrated by simulations of intermediate-energy neutrons, obtaining particle-by-particle distributions of range, energy deposition, LET and their evolution in silicon.

PA-3

Single-event effect simulation based on an improved ion track temporal characteristics model

Authors: W. Zhao(1)
1. Northwest Institute of Nuclear Technology, China

Presenting author: Wen Zhao

An improved ion track temporal characteristics model was developed and incorporated into single-event effects TCAD simulation. The impact of ion track temporal characteristics on SEE responses of devices operating at different switching speeds was analyzed.

PA-4

Improved Diffusion-Collection Model Including Carrier Recombination and Electric Field

Authors: J. Autran(1), D. Munteanu(2), S. Moindjie(2), M. Dentan(3)
1. Université de Rennes, France
2. CNRS, France, 3. CEA; CERN, France

Presenting author: Jean-Luc AUTRAN

A general framework for the diffusion-collection model is proposed to analytically determine time-dependent equations of the collected current and charge. The effects of carrier recombination and carrier drift under a constant electric field are included.

PA-5

Modeling the Impact of Spatially Non-Uniform Irradiation on PIN Diodes

Authors: C. Ardisson(1), P. Caron(1), C. Inguimbert(1)
1. ONERA, France

Presenting author: Cyril Ardisson

A drift-diffusion solver extended with displacement damage mechanisms is validated against p-i-n diode measurements. Simulations reproduce the forward voltage shift under neutron irradiation and demonstrate that partial volume irradiation missestimates local displacement damage dose.

PA-6

Deep Learning‑Based Prediction of Single‑Event Transient Effects in SiGe HBTs

Authors: J. Zhang(1), X. Qin(1), Y. Yan(1), W. Hajdas(2), X. Wang(3), L. Lv(1)
1. Xidian University, China
2. Paul Sherrer Institute, Switzerland
3. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China

Presenting author: Jinxin Zhang

This work proposes a deep learning based SET prediction method for SiGe HBTs. A dual-branch LSTM network prediction model is designed. The prediction accuracy of the model is validated using TCAD and heavy-ion experimental data.

PA-7

Interpretation of SEU Ion-Species and Angular Dependence Based on Radial Track Structure in a 28-nm FPGA

Authors: M. Tominaga(1), Y. Sunada(1), R. Kiuchi(1), Y. Hiroshima(1), H. Iwashita(1), H. Sato(2), T. Kamiyama(2), M. Furusaka(2), Y. Kiyanagi(2)
1. NTT, Inc., Japan
2. Graduate School of Engineering, Hokkaido University, Japan

Presenting author: Mayu Tominaga

SEU characteristics in a 28-nm SRAM-based FPGA were investigated under various ion species and angular conditions. The results demonstrate radial track structure and device geometry, rather than LET alone, govern upset multiplicity and angular dependence.