CONFERENCE COMMITTEE
Technical Committee
A: SEE Mechanisms and modelling
Mike King
Intel - USA
Victor Malherbe
STMicro - France
B: SEE Devices and ICs
Pierre Garcia
TRAD - France
Bharat Bhuva
University Vanderbilt - USA
C: Photonics, Optoelectronics and Sensors
Ali Jouni
Sodern - France
Jochen Kuhnhenn
Fraunhofer - Germany
D: Radiation effects in devices and ICs
Chen Li
Univ. Saskatchewan - Canada
Corinna Martinella
University Zurich - Switzerland
E: Radiation effects in complex devices and Systems
Alejandro Urena
ONERA - France
Paolo Rech
University Trento - Italy
F: Radiation hardening techniques
Florence Malou
CNES - France
Fernanda Lima
Kastensmidt University of Porto Alegre - Brazil
G: Dosimetry and Facilities
Camille Bélanger-Champagne
TRIUMF - Canada
Christoph Tscherne
Seibersdorf Laboratories - Austria
H: Basic Mechanisms
Rosine Coq Germanicus
University Caen - France
Ian Dawson
Queen Mary London
I: Radiation environments
Cesar Boatella Polo
ESA - Nederland
Stuart George
NASA
J: Radiation hardness assurance
Roberta Mancini
Thales Alenia Space - Italy
Marc Poizat
ESA - Nederland
DW: Data workshop
Steve Witczak
Northrop Grumman Corporation - USA
Peter Svihra
FJFI CTU in Prague
P: Poster
Marta Bagatin
University of Padova, Italy
AIan Owens
former ESA - Nederland